Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy
- Award ID(s):
- 1839196
- Publication Date:
- NSF-PAR ID:
- 10102999
- Journal Name:
- Physical Review Materials
- Volume:
- 3
- Issue:
- 6
- ISSN:
- 2475-9953; PRMHAR
- Publisher:
- American Physical Society
- Sponsoring Org:
- National Science Foundation
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