The electron dynamics in heterostructures formed by multilayer graphite and monolayer or bulk MoS 2 were studied by femtosecond transient absorption measurements. Samples of monolayer MoS 2 -multilayer graphite and bulk MoS 2 -multilayer graphite were fabricated by exfoliation and dry transfer techniques. Ultrafast laser pulses were used to inject electron–hole pairs into monolayer or bulk MoS 2 . The transfer of these photocarriers to the adjacent multilayer graphite was time resolved by measuring the differential reflection of a probe pulse. We found that photocarriers injected into monolayer MoS 2 transfer to graphite on an ultrafast time scale shorter than 400 fs. Such an efficient charge transfer is key to the development of high performance optoelectronic devices with MoS 2 as the light absorbing layer and graphite as electrodes. The absorption coefficient of monolayer MoS 2 can be controlled by the carriers in graphite. This process can be used for interlayer coupling and control. In a bulk MoS 2 -graphite heterostructure, the photocarrier transfer time is about 220 ps, due to the inefficient interlayer charge transport in bulk MoS 2 . These results provide useful information for developing optoelectronic devices based on MoS 2 -graphite heterostructures.
more »
« less
Photocarrier dynamics in monolayer phosphorene and bulk black phosphorus
We report a combined theoretical and experimental study on photocarrier dynamics in monolayer phosphorene and bulk black phosphorus. Samples of monolayer phosphorene and bulk black phosphorus were fabricated by mechanical exfoliation, identified according to their reflective contrasts, and protected by covering them with hexagonal boron nitride layers. Photocarrier dynamics in these samples was studied by an ultrafast pump–probe technique. The photocarrier lifetime of monolayer phosphorene was found to be about 700 ps, which is about 9 times longer than that of bulk black phosphorus. This trend was reproduced in our calculations based on ab initio nonadiabatic molecular dynamics combined with time-domain density functional theory in the Kohn–Sham representation, and can be attributed to the smaller bandgap and stronger nonadiabatic coupling in bulk. The transient absorption response was also found to be dependent on the sample orientation with respect to the pump polarization, which is consistent with the previously reported anisotropic absorption of phosphorene. In addition, an oscillating component of the differential reflection signal at early probe delays was observed in the bulk sample and was attributed to the layer-breathing phonon mode with an energy of about 1 meV and a decay time of about 1.35 ps. These results provide valuable information for application of monolayer phosphorene in optoelectronics.
more »
« less
- Award ID(s):
- 1505852
- PAR ID:
- 10104424
- Date Published:
- Journal Name:
- Nanoscale
- Volume:
- 10
- Issue:
- 24
- ISSN:
- 2040-3364
- Page Range / eLocation ID:
- 11307 to 11313
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
We report a comprehensive study on the effects of rhenium doping on optical properties and photocarrier dynamics of MoS 2 monolayer, few-layer, and bulk samples. Monolayer and few-layer samples of Re-doped (0.6%) and undoped MoS 2 were fabricated by mechanical exfoliation, and were studied by Raman spectroscopy, optical absorption, photoluminescence, and time-resolved differential reflection measurements. Similar Raman, absorption, and photoluminescence spectra were obtained from doped and undoped samples, indicating that the Re doping at this level does not significantly alter the lattice and electronic structures. Red-shift and broadening of the two phonon Raman modes were observed, showing the lattice strain and carrier doping induced by Re. The photoluminescence yield of the doped monolayer is about 15 times lower than that of the undoped sample, while the photocarrier lifetime is about 20 times shorter in the doped monolayer. Both observations can be attributed to diffusion-limited Auger nonradiative recombination of photocarriers at Re dopants. These results provide useful information for developing a doping strategy of MoS 2 for optoelectronic applications.more » « less
-
Understanding excitonic dynamics in two-dimensional semiconducting transition metal dichalcogenides is important for developing their optoelectronic applications. Recently, transient absorption techniques based on resonant excitonic absorption have been used to study various aspects of excitonic dynamics in these materials. The transient absorption in such measurements originates from phase-space state filling, bandgap renormalization, or screening effects. Here we report a new method to probe excitonic dynamics based on exciton intraband absorption. In this Drude-like process, probe photons are absorbed by excitons in their intraband excitation to higher energy states, causing a transient absorption signal. Although the magnitude of the transient absorption is lower than that of the resonant techniques, the new method is less restrictive on the selection of probe wavelength, has a larger linear range, and can provide complementary information on photocarrier dynamics. Using the WS 2 monolayer and bulk samples as examples, we show that the new method can probe exciton–exciton annihilation at high densities and reveal exciton formation processes. We also found that the exciton intraband absorption cross section of the WS 2 monolayer is on the order of 10 −18 cm 2 .more » « less
-
Abstract A comprehensive experimental study on optical properties and photocarrier dynamics in Bi2O2Se monolayers and nanoplates is presented. Large and uniform Bi2O2Se nanoplates with various thicknesses down to the monolayer limit are fabricated. In nanoplates, a direct optical transition near 720 nm is identified by optical transmission, photoluminescence, and transient absorption spectroscopic measurements and is attributed to the transition between the valence and conduction bands in the Γ valley. Time‐resolved differential reflection measurements reveal ultrafast carrier thermalization and energy relaxation processes and a photocarrier recombination lifetime of about 200 ps in nanoplates. Furthermore, by spatially resolving the differential reflection signal, a photocarrier diffusion coefficient of about 4.8 cm2s−1is obtained, corresponding to a mobility of about 180 cm2V−1s−1. A similar direct transition is also observed in monolayer Bi2O2Se, suggesting that the states in the Γ valley do not change significantly with the thickness. The temporal dynamics of the excitons in the monolayer is quite different from the nanoplates, with a strong saturation effect and fast exciton–exciton annihilation at high densities. Spatially and temporally resolved measurements yield an exciton diffusion coefficient of about 20 cm2s−1.more » « less
-
The newly developed van der Waals materials allow fabrication of multilayer heterostructures. Early efforts have mostly focused on heterostructures formed by similar materials. More recently, however, attempts have been made to expand the types of materials, such as topological insulators and organic semiconductors. Here we introduce an amorphous semiconductor to the material library for constructing van der Waals heterostructures. Samples composed of 2 nm amorphous black phosphorus synthesized by pulsed laser deposition and monolayer WS 2 obtained by mechanical exfoliation were fabricated by dry transfer. Photoluminescence measurements revealed that photocarriers excited in WS 2 of the heterostructure transfer to amorphous black phosphorus, in the form of either energy or charge transfer, on a time scale shorter than the exciton lifetime in WS 2 . Transient absorption measurements further indicate that holes can efficiently transfer from WS 2 to amorphous black phosphorus. However, interlayer electron transfer in either direction was found to be absent. The lack of electron transfer from amorphous black phosphorus to WS 2 is attributed to the localized electronic states in the amorphous semiconductor. Furthermore, we show that a hexagonal BN bilayer can effectively change the hole transfer process.more » « less
An official website of the United States government

