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Title: Passivation of Thin Channel Zinc Tin Oxide TFTs Using Al 2 O 3 Deposited by O 3 -Based Atomic Layer Deposition
Award ID(s):
1727918
NSF-PAR ID:
10111020
Author(s) / Creator(s):
;
Date Published:
Journal Name:
IEEE Electron Device Letters
Volume:
40
Issue:
7
ISSN:
0741-3106
Page Range / eLocation ID:
1120 to 1123
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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