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Abstract As an alternative to traditional photolithography, printing processes are widely explored for the patterning of customizable devices. However, to date, the majority of high‐resolution printing processes for functional nanomaterials are additive in nature. To complement additive printing, there is a need for subtractive processes, where the printed ink results in material removal, rather than addition. In this study, a new subtractive patterning approach that uses electrohydrodynamic‐jet (e‐jet) printing of acid‐based inks to etch nanoscale zinc oxide (ZnO) thin films deposited using atomic layer deposition (ALD) is introduced. By tuning the printing parameters, the depth and linewidth of the subtracted features can be tuned, with a minimum linewidth of 11 µm and a tunable channel depth with ≈5 nm resolution. Furthermore, by tuning the ink composition, the volatility and viscosity of the ink can be adjusted, resulting in variable spreading and dissolution dynamics at the solution/film interface. In the future, acid‐based subtractive patterning using e‐jet printing can be used for rapid prototyping or customizable manufacturing of functional devices on a range of substrates with nanoscale precision. 

Abstract A customized atmospheric‐pressure spatial atomic layer deposition (AP‐SALD) system is designed and implemented, which enables mechatronic control of key process parameters, including gap size and parallel alignment. A showerhead depositor delivers precursors to the substrate while linear actuators and capacitance probe sensors actively maintain gap size and parallel alignment through multiple‐axis tilt and closed‐loop feedback control. Digital control of geometric process variables with active monitoring is facilitated with a custom software control package and user interface. AP‐SALD of TiO₂is performed to validate self‐limiting deposition with the system. A novel multi‐axis printing methodology is introduced usingx‐yposition control to define a customized motion path, which enables an improvement in the thickness uniformity by reducing variations from 8% to 2%. In the future, this mechatronic system will enable experimental tuning of parameters that can inform multi‐physics modeling to gain a deeper understanding of AP‐SALD process tolerances, enabling new pathways for non‐traditional SALD processing that can push the technology towards large‐scale manufacturing. 

Abstract New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm²V⁻¹s⁻¹, due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm²V^–1s^–1and a subthreshold slope of 0.29 V dec^–1. Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐kgate insulator (ALD Al₂O₃), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates. 

Spatial atomic layer deposition (SALD) is a thin film deposition technique that could provide precise atomic-scale control at a large enough scale for many applications, such as clean energy technologies, catalytic conversion, batteries, and anti-fouling coatings. The spatially separated precursor zones are sequentially exposed to the substrate surface to deposit a film with precise control. If the precursor zones were to intermix during a deposition process, the precise control over film thickness would be lost. Therefore, it is essential to control the location of the precursors within the process region during a manufacturing process. This is typically achieved by controlling the gas flow rates and/or pressures, however it is challenging to actively monitor the location of the precursors during a deposition process as the process region has a small characteristic length and the vapor/gas precursors are difficult to observe/monitor. Therefore, there is a need to validate the precursor location and consequential process quality during a deposition. This can be of particular importance for substrate surfaces that are highly irregular or for manufacturing conditions where external factors such as temperature and ambient air speeds could change dynamically. In this study, a reduced order COMSOL Multiphysics® model is introduced that can predict the location of precursors in the process region. The model itself is discussed; the mesh size is selected considering accuracy and computation time; the model outputs are shown; and an initial experimental validation of the model is demonstrated. 

We have developed a single-step, high-throughput methodology to selectively confine submicron particles of a specific size into sequentially inscribed nanovoid patterns by utilizing electrostatic and entropic particle-void interactions in an ionic solution. The nanovoid patterns can be rendered positively charged by coating with an aluminum oxide layer, which can then localize negatively charged particles of a specific size into ordered arrays defined by the nanovoid topography. Based on the Poisson-Boltzmann model, the size-selective localization of particles in the voids is directed by the interplay between particle-nanovoid geometry, electrostatic interactions, and ionic entropy change induced by charge regulation in the electrical double layer overlapping region. The underlying principle and developed method could potentially be extended to size-selective trapping, separation, and patterning of many other objects including biological structures.