Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates
- Award ID(s):
- 1711030
- Publication Date:
- NSF-PAR ID:
- 10119179
- Journal Name:
- Journal of Applied Physics
- Volume:
- 125
- Issue:
- 8
- Page Range or eLocation-ID:
- 082517
- ISSN:
- 0021-8979
- Sponsoring Org:
- National Science Foundation