Polymer‐based dielectrics are essential components in electrical and power electronic systems for high power density storage and conversion. A mounting challenge for polymer dielectrics is how to maintain their electrical insulation at not only high electric fields but also elevated temperatures, in order to meet the growing needs for renewable energies and grand electrifications. Here, a sandwiched barium titanate/polyamideimide nanocomposite with reinforced interfaces via two‐dimensional nanocoatings is presented. It is demonstrated that boron nitride and montmorillonite nanocoatings can block and dissipate injected charges, respectively, to present a synergetic effect on the suppression of conduction loss and the enhancement of breakdown strength. Ultrahigh energy densities of 2.6, 1.8, and 1.0 J cm−3are obtained at 150 °C, 200 °C, and 250 °C, respectively, with a charge‐discharge efficiency >90%, far outperforming the state‐of‐the‐art high‐temperature polymer dielectrics. Cyclic charge‐discharge tests up to 10 000 times verify the excellent lifetime of the interface‐reinforced sandwiched polymer nanocomposite. This work provides a new pathway to design high‐performance polymer dielectrics for high‐temperature energy storage via interfacial engineering.
- Award ID(s):
- 1744213
- NSF-PAR ID:
- 10123055
- Date Published:
- Journal Name:
- Science
- Volume:
- 365
- Issue:
- 6453
- ISSN:
- 0036-8075
- Page Range / eLocation ID:
- 578 to 582
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
Abstract -
Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.
-
High‐energy‐density storage devices play a major role in modern electronics from traditional lithium‐ion batteries to supercapacitors for a variety of applications from rechargeable devices to advanced military equipment. Despite the mass adoption of polymer capacitors, their application is limited by their low energy densities and low‐temperature tolerance. Polymer nanocomposites based on 2D nanomaterials have superior capacitive energy densities, higher thermal stabilities, and higher mechanical strength as compared to the pristine polymers and nanocomposites based on 0D or 1D nanomaterials, thus making them ideal for high‐energy‐density dielectric energy storage applications. Here, the recent advances in 2D‐nanomaterial‐based nanocomposites and their implications for energy storage applications are reviewed. Nanocomposites based on conducting 2D nanofillers such as graphene, reduced graphene oxide, MXenes, semiconducting 2D nanofillers including transition metal dichalcogenides such as MoS2, dielectric 2D nanofillers including hBN, Mica, Al2O3, TiO2, Ca2Nb3O10and MMT, and their effects on permittivity, dielectric strength, capacitive energy density, efficiency, thermal stability, and the mechanical strength, are discussed. Also, the theory and machine‐learning‐guided design of polymer 2D nanomaterial composites is learnt and the challenges and opportunities for developing ultrahigh‐capacitive‐energy‐density devices based on these nanofiller polymer composites are presented.
-
The in situ metalorganic chemical vapor deposition (MOCVD) growth of Al 2 O 3 dielectrics on β-Ga 2 O 3 and β-(Al x Ga 1−x ) 2 O 3 films is investigated as a function of crystal orientations and Al compositions of β-(Al x Ga 1−x ) 2 O 3 films. The interface and film qualities of Al 2 O 3 dielectrics are evaluated by high-resolution x-ray diffraction and scanning transmission electron microscopy imaging, which indicate the growth of high-quality amorphous Al 2 O 3 dielectrics with abrupt interfaces on (010), (100), and [Formula: see text] oriented β-(Al x Ga 1−x ) 2 O 3 films. The surface stoichiometries of Al 2 O 3 deposited on all orientations of β-(Al x Ga 1−x ) 2 O 3 are found to be well maintained with a bandgap energy of 6.91 eV as evaluated by high-resolution x-ray photoelectron spectroscopy, which is consistent with the atomic layer deposited (ALD) Al 2 O 3 dielectrics. The evolution of band offsets at both in situ MOCVD and ex situ ALD deposited Al 2 O 3 /β-(Al x Ga 1−x ) 2 O 3 is determined as a function of Al composition, indicating the influence of the deposition method, orientation, and Al composition of β-(Al x Ga 1−x ) 2 O 3 films on resulting band alignments. Type II band alignments are determined at the MOCVD grown Al 2 O 3 /β-(Al x Ga 1−x ) 2 O 3 interfaces for the (010) and (100) orientations, whereas type I band alignments with relatively low conduction band offsets are observed along the [Formula: see text] orientation. The results from this study on MOCVD growth and band offsets of amorphous Al 2 O 3 deposited on differently oriented β-Ga 2 O 3 and β-(Al x Ga 1−x ) 2 O 3 films will potentially contribute to the design and fabrication of future high-performance β-Ga 2 O 3 and β-(Al x Ga 1−x ) 2 O 3 based transistors using MOCVD in situ deposited Al 2 O 3 as a gate dielectric.more » « less
-
We report the dielectric Properties of HfO 2 -based films in the optical–high frequency range. The demonstrated tunability of the optical dielectric constant of HfO 2 -based compounds is of great relevance for optoelectronic applications, e.g., high-refractive index dielectrics for nanoantenna and optical coatings for electronic displays. Since the optical dielectric constant of HfO 2 is determined by the electronic structure and its crystal environment, we tune the physical properties of HfO 2 films on MgO by adding different dopants. In this work, we aim to determine the influence of doping together with the resulting crystal structure on the optical dielectric constant. Hence, we studied 20 mol. % Y-doped HfO 2 (HYO), Hf 0.5 Zr 0.5 O 2 (HZO), and Hf 0.5 Ce 0.5 O 2 (HCO). Among the dopants, Y 2 O 3 has the lowest, ZrO 2 an intermediate, and CeO 2 the highest real part of the optical dielectric constant. The optical dielectric constant is found to be lowest in the cubic HYO films. An intermediate dielectric constant is found in HZO films that is predominantly in the monoclinic phase, but additionally hosts the cubic phase. The highest dielectric constant is observed in HCO films that are predominantly in the cubic phase with inclusions of the monoclinic phase. The observed trend is in good agreement with the dominant role of the dopant type in setting the optical dielectric constant.more » « less