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Title: Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °C
Award ID(s):
1653343
NSF-PAR ID:
10140341
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
66
Issue:
9
ISSN:
0018-9383
Page Range / eLocation ID:
3861 to 3866
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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