Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °C
- Award ID(s):
- 1653343
- NSF-PAR ID:
- 10140341
- Date Published:
- Journal Name:
- IEEE Transactions on Electron Devices
- Volume:
- 66
- Issue:
- 9
- ISSN:
- 0018-9383
- Page Range / eLocation ID:
- 3861 to 3866
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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