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1. Design of infrared microspectrometer based on phase-modulated axilenses

   https://doi.org/10.1364/AO.390610  

   Chen, Yuyao ; Britton, Wesley A. ; Dal Negro, Luca ( June 2020 , Applied Optics)

   We design and characterize a novel axilens-based diffractive optics platform that flexibly combines efficient point focusing and grating selectivity and is compatible with scalable top-down fabrication based on a four-level phase mask configuration. This is achieved using phase-modulated compact axilens devices that simultaneously focus incident radiation of selected wavelengths at predefined locations with larger focal depths compared with traditional Fresnel lenses. In addition, the proposed devices are polarization-insensitive and maintain a large focusing efficiency over a broad spectral band. Specifically, here we discuss and characterize modulated axilens configurations designed for long-wavelength infrared (LWIR) in the 6 µm–12 µm wavelength range and in the 4 µm–6 µm midwavelength infrared (MWIR) range. These devices are ideally suited for monolithic integration atop the substrate layers of infrared focal plane arrays and for use as compact microspectrometers. We systematically study their focusing efficiency, spectral response, and cross-talk ratio; further, we demonstrate linear control of multiwavelength focusing on a single plane. Our design method leverages Rayleigh–Sommerfeld diffraction theory and is validated numerically using the finite element method. Finally, we demonstrate the application of spatially modulated axilenses to the realization of a compact, single-lens spectrometer. By optimizing our devices, we achieve a minimum distinguishable wavelength interval of$\mathrm{\Delta <\#comment/>}\mathrm{\lambda <\#comment/>}=240\mathrm{n}\mathrm{m}$at${\mathrm{\lambda <\#comment/>}}_c=8\text{µ<\#comment/>}\mathrm{m}$and$\mathrm{\Delta <\#comment/>}\mathrm{\lambda <\#comment/>}=165\mathrm{n}\mathrm{m}$at${\mathrm{\lambda <\#comment/>}}_c=5\text{µ<\#comment/>}\mathrm{m}$. The proposed devices add fundamental spectroscopic capabilities to compact imaging devices for a number of applications ranging from spectral sorting to LWIR and MWIR phase contrast imaging and detection.

    

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2. Monolithic all-silicon flat lens for broadband LWIR imaging

   https://doi.org/10.1364/OL.426384  

   Kigner, Orrin ; Meem, Monjurul ; Baker, Brian ; Banerji, Sourangsu ; Hon, Philip W. C. ; Sensale-Rodriguez, Berardi ; Menon, Rajesh ( August 2021 , Optics Letters)

   We designed, fabricated, and characterized a flat multi-level diffractive lens comprised of only silicon with$\mathrm{d}\mathrm{i}\mathrm{a}\mathrm{m}\mathrm{e}\mathrm{t}\mathrm{e}\mathrm{r}=15.2\mathrm{m}\mathrm{m}$, focal$\mathrm{l}\mathrm{e}\mathrm{n}\mathrm{g}\mathrm{t}\mathrm{h}=19\mathrm{m}\mathrm{m}$, numerical aperture of 0.371, and operating over the long-wave infrared (LWIR)$\mathrm{s}\mathrm{p}\mathrm{e}\mathrm{c}\mathrm{t}\mathrm{r}\mathrm{u}\mathrm{m}=8\text{µ<\#comment/>}\mathrm{m}$to 14 µm. We experimentally demonstrated a field of view of 46°, depth of focus$><\#comment/>5\mathrm{m}\mathrm{m}$, and wavelength-averaged Strehl ratio of 0.46. All of these metrics were comparable to those of a conventional refractive lens. The active device thickness is only 8 µm, and its weight (including the silicon substrate) is less than 0.2 g.

    

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3. Widely separated optical Kerr parametric oscillation in AlN microrings

   https://doi.org/10.1364/OL.384317  

   Tang, Yulong ; Gong, Zheng ; Liu, Xianwen ; Tang, Hong X. ( February 2020 , Optics Letters)

   Here, we report${\mathrm{\chi <\#comment/>}}^{(3)}$-based optical parametric oscillation (OPO) with widely separated signal–idler frequencies from crystalline aluminum nitride microrings pumped at$2\text{µ<\#comment/>}\mathrm{m}$. By tailoring the width of the microring, OPO reaching toward the telecom and mid-infrared bands with a frequency separation of 64.2 THz is achieved. While dispersion engineering through changing the microring width is capable of shifting the OPO sideband by$><\#comment/>9\mathrm{T}\mathrm{H}\mathrm{z}$, the OPO frequency can also be agilely tuned in the ranges of 1 and 0.1 THz, respectively, by shifting the pump wavelength and controlling the chip’s temperature. At high pump powers, the OPO sidebands further evolve into localized frequency comb lines. Such large-frequency-shift OPO with flexible wavelength tunability will lead to enhanced chip-scale light sources.

    

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4. Electro-optic interface for ultrasensitive intracavity electric field measurements at microwave and terahertz frequencies

   https://doi.org/10.1364/OPTICA.384160  

   Benea-Chelmus, Ileana-Cristina ; Salamin, Yannick ; Settembrini, Francesca Fabiana ; Fedoryshyn, Yuriy ; Heni, Wolfgang ; Elder, Delwin L. ; Dalton, Larry R. ; Leuthold, Juerg ; Faist, Jérôme ( May 2020 , Optica)

   Electro-optic quantum coherent interfaces map the amplitude and phase of a quantum signal directly to the phase or intensity of a probe beam. At terahertz frequencies, a fundamental challenge is not only to sense such weak signals (due to a weak coupling with a probe in the near-infrared) but also to resolve them in the time domain. Cavity confinement of both light fields can increase the interaction and achieve strong coupling. Using this approach, current realizations are limited to low microwave frequencies. Alternatively, in bulk crystals, electro-optic sampling was shown to reach quantum-level sensitivity of terahertz waves. Yet, the coupling strength was extremely weak. Here, we propose an on-chip architecture that concomitantly provides subcycle temporal resolution and an extreme sensitivity to sense terahertz intracavity fields below 20 V/m. We use guided femtosecond pulses in the near-infrared and a confinement of the terahertz wave to a volume of$V_{\mathrm{T}\mathrm{H}\mathrm{z}}\sim <\#comment/>{10}^{-<\#comment/>9}({\mathrm{\lambda <\#comment/>}}_{\mathrm{T}\mathrm{H}\mathrm{z}}/2{)}^3$in combination with ultraperformant organic molecules ($r_{33}=170\mathrm{p}\mathrm{m}/\mathrm{V}$) and accomplish a record-high single-photon electro-optic coupling rate of$g_{\mathrm{e}\mathrm{o}}=2\mathrm{\pi <\#comment/>}\times <\#comment/>0.043\mathrm{G}\mathrm{H}\mathrm{z}$, 10,000 times higher than in recent reports of sensing vacuum field fluctuations in bulk media. Via homodyne detection implemented directly on chip, the interaction results into an intensity modulation of the femtosecond pulses. The single-photon cooperativity is$C_0=1.6\times <\#comment/>{10}^{-<\#comment/>8}$, and the multiphoton cooperativity is$C=0.002$at room temperature. We show$><\#comment/>70\mathrm{d}\mathrm{B}$dynamic range in intensity at 500 ms integration under irradiation with a weak coherent terahertz field. Similar devices could be employed in future measurements of quantum states in the terahertz at the standard quantum limit, or for entanglement of subsystems on subcycle temporal scales, such as terahertz and near-infrared quantum bits.

    

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5. Ultralow-threshold thin-film lithium niobate optical parametric oscillator

   https://doi.org/10.1364/OPTICA.418984  

   Lu, Juanjuan ; Al Sayem, Ayed ; Gong, Zheng ; Surya, Joshua B. ; Zou, Chang-Ling ; Tang, Hong X. ( April 2021 , Optica)

   Materials with strong second-order (${\mathrm{\chi <\#comment/>}}^{(2)}$) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss${\mathrm{\chi <\#comment/>}}^{(2)}$materials remains challenging and limits the threshold power of on-chip${\mathrm{\chi <\#comment/>}}^{(2)}$OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ($\sim <\#comment/>30\text{µ<\#comment/>}\mathrm{W}$) is 400 times lower than that in previous${\mathrm{\chi <\#comment/>}}^{(2)}$integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks.

    

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