Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN
- Award ID(s):
- 1719875
- Publication Date:
- NSF-PAR ID:
- 10146810
- Journal Name:
- Applied Physics Letters
- Volume:
- 115
- Issue:
- 17
- Page Range or eLocation-ID:
- 172101
- ISSN:
- 0003-6951
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Publisher's Version of Record
- https://doi.org/10.1063/1.5121329
