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Title: Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN
Award ID(s):
1719875
NSF-PAR ID:
10146810
Author(s) / Creator(s):
; ; ;  ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
115
Issue:
17
ISSN:
0003-6951
Page Range / eLocation ID:
172101
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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