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Title: A Highly Efficient Dual-band Harmonic-tuned GaN RF Synchronous Rectifier with Integrated Coupler and Phase Shifter
This paper presents a dual-band RF rectifying circuit for wireless power transmission at 1.17 GHz and 2.4 GHz. A dual-band harmonic-tuned inverse-class F/class-F mode power amplifier using a 10 W GaN device has been utilized to implement the proposed rectifier with an on-board coupler and phase shifter. The matching circuit is precisely designed so that the circuit operates in inverse class F and class F mode in the lower and upper frequency bands using dual-band harmonic tuning, respectively. Measurement results show that the rectifier circuit has 78% and 76% efficiencies at 1.17 GHz and 2.4 GHz frequency bands, respectively. To the best of the authors' knowledge, this rectifier is the first demonstration of a dual-band harmonic-tuned synchronous rectifier using a GaN HEMT device with an integrated coupler and phase-shifter for a watt-level RF input power.  more » « less
Award ID(s):
1705026
NSF-PAR ID:
10146894
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
2019 IEEE MTT-S International Microwave Symposium (IMS)
Page Range / eLocation ID:
1320 to 1323
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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