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Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In 2 O 3−x
- PAR ID:
- 10147577
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 127
- Issue:
- 17
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- Article No. 175701
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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