Meneghini, Matteo, Fabris, Elena, Ruzzarin, Maria, De Santi, Carlo, Nomoto, Kazuki, Hu, Zhenqi, Li, Wenshen, Gao, Xingya, Jena, Debdeep, Xing, Huili Grace, Sun, Min, Palacios, Tomas, Meneghesso, Gaudenzio, and Zanoni, Enrico. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review. Retrieved from https://par.nsf.gov/biblio/10148489. physica status solidi (a) 217.7 Web. doi:10.1002/pssa.201900750.

Meneghini, Matteo, Fabris, Elena, Ruzzarin, Maria, De Santi, Carlo, Nomoto, Kazuki, Hu, Zhenqi, Li, Wenshen, Gao, Xingya, Jena, Debdeep, Xing, Huili Grace, Sun, Min, Palacios, Tomas, Meneghesso, Gaudenzio, & Zanoni, Enrico. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review. physica status solidi (a), 217 (7). Retrieved from https://par.nsf.gov/biblio/10148489. https://doi.org/10.1002/pssa.201900750

Meneghini, Matteo, Fabris, Elena, Ruzzarin, Maria, De Santi, Carlo, Nomoto, Kazuki, Hu, Zhenqi, Li, Wenshen, Gao, Xingya, Jena, Debdeep, Xing, Huili Grace, Sun, Min, Palacios, Tomas, Meneghesso, Gaudenzio, and Zanoni, Enrico. "Degradation Mechanisms of GaN‐Based Vertical Devices: A Review". physica status solidi (a) 217 (7). Country unknown/Code not available. https://doi.org/10.1002/pssa.201900750. https://par.nsf.gov/biblio/10148489.

@article{osti_10148489,
place = {Country unknown/Code not available}, title = {Degradation Mechanisms of GaN‐Based Vertical Devices: A Review}, url = {https://par.nsf.gov/biblio/10148489}, DOI = {10.1002/pssa.201900750}, abstractNote = {}, journal = {physica status solidi (a)}, volume = {217}, number = {7}, author = {Meneghini, Matteo and Fabris, Elena and Ruzzarin, Maria and De Santi, Carlo and Nomoto, Kazuki and Hu, Zhenqi and Li, Wenshen and Gao, Xingya and Jena, Debdeep and Xing, Huili Grace and Sun, Min and Palacios, Tomas and Meneghesso, Gaudenzio and Zanoni, Enrico}, }