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Title: GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current
Award ID(s):
1710298
NSF-PAR ID:
10149614
Author(s) / Creator(s):
; ; ; ; ; ; ;
Date Published:
Journal Name:
IEDM Proceedings 2019
Page Range / eLocation ID:
4.5.1 to 4.5.4
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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