GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current (Conference Paper) | NSF PAGES

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Citation Details

GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current

Award ID(s):: 1710298

NSF-PAR ID:: 10149614

Author(s) / Creator(s):: Bader, S. J.; Chaudhuri, R.; Hickman, A.; Nomoto, K.; Bharadwaj, S.; Then, H. W.; Xing, H. G.; Jena, D.

Date Published:: 2019-12-01

Journal Name:: IEDM Proceedings 2019

Page Range / eLocation ID:: 4.5.1 to 4.5.4

Format(s):: Medium: X

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
Conference Paper:
https://doi.org/10.1109/IEDM19573.2019.8993532