GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current (Journal Article) | NSF PAGES

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Citation Details

GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current

Authors:: Bader, S. J.; Chaudhuri, R.; Hickman, A.; Nomoto, K.; Bharadwaj, S.; Then, H. W.; Xing, H. G.; Jena, D.

Award ID(s):: 1710298

Publication Date:: 2019-12-01

NSF-PAR ID:: 10149614

Journal Name:: IEDM Proceedings 2019

Page Range or eLocation-ID:: 4.5.1 to 4.5.4

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
Publisher's Version of Record
https://doi.org/10.1109/IEDM19573.2019.8993532