skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 10 13 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The observed results provide a probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces.  more » « less
Award ID(s):
1710298
PAR ID:
10149646
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Science
Volume:
365
Issue:
6460
ISSN:
0036-8075
Page Range / eLocation ID:
1454 to 1457
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; (, Metrology)
    GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-bandgap semiconductors, resulting in better radiation resistance. Theoretically, it supports higher speeds as the device dimensions could be reduced without suffering voltage breakdown. The simulation and experimental results illustrate the superior performance of the Gallium Nitride High-Electron-Mobility Transistors in an amplifying circuit. Using a spice model for commercially available Gallium Nitride High-Electron-Mobility Transistors, non-distorted output to an input signal of 200 ps was displayed. Real-world measurements underscore the fast response of the Gallium Nitride High-Electron-Mobility Transistors with its measured slew rate at approximately 3000 V/μs, a result only 17% lower than the result obtained from the simulation. This fast response, coupled with the amplifier radiation resistance, shows promise for designing improved detection and imaging circuits with long Mean Time Between Failure required, for example, by next-generation industrial-process gamma transmission-computed tomography. 
    more » « less
  2. ; ; ; ; ; ; ; ; ; ; et al (, Applied Physics Letters)
    Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (∼234 V) as compared to GaN (∼168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics. 
    more » « less
  3. ; ; ; ; ; ; ; ; (, Applied Physics Letters)
    The polarization difference and band offset between Al(Ga)N and GaN induce two-dimensional (2D) free carriers in Al(Ga)N/GaN heterojunctions without any chemical doping. A high-density 2D electron gas (2DEG), analogous to the recently discovered 2D hole gas in a metal-polar structure, is predicted in a N-polar pseudomorphic GaN/Al(Ga)N heterostructure on unstrained AlN. We report the observation of such 2DEGs in N-polar undoped pseudomorphic GaN/AlGaN heterostructures on single-crystal AlN substrates by molecular beam epitaxy. With a high electron density of ∼4.3 ×1013/cm2 that maintains down to cryogenic temperatures and a room temperature electron mobility of ∼450 cm2/V s, a sheet resistance as low as ∼320 Ω/◻ is achieved in a structure with an 8 nm GaN layer. These results indicate significant potential of AlN platform for future high-power RF electronics based on N-polar III-nitride high electron mobility transistors. 
    more » « less
  4. ; ; ; ; ; ; ; ; ; ; et al (, Advanced Functional Materials)
    Abstract Recently, 2D electron gases have been observed in atomically thin semiconducting crystals, enabling the observation of rich physical phenomena at the quantum level within the ultimate thickness limit. However, the observation of 2D electron gases and subsequent quantum Hall effect require exceptionally high crystalline quality, rendering mechanical exfoliation as the only method to produce high‐quality 2D semiconductors of black phosphorus and indium selenide (InSe), which hinder large‐scale device applications. Here, the controlled one‐step synthesis of high‐quality 2D InSe thin films via chemical vapor transport method is reported. The carrier Hall mobility of hexagonal boron nitride (hBN) encapsulated InSe flakes can be up to 5000 cm2V−1s−1at 1.5 K, enabling to observe the quantum Hall effect in a synthesized van der Waals semiconductor. The existence of the quantum Hall effect in directly synthesized 2D semiconductors indicates a high quality of the chemically synthesized 2D semiconductors, which hold promise in quantum devices and applications with high mobility. 
    more » « less
  5. ; ; ; ; ; (, physica status solidi (b))
    Large‐area growth of polarization‐induced 2D hole gases (2DHGs) in a GaN/AlN heterostructure using molecular beam epitaxy (MBE) is demonstrated. A study of the effect of metal fluxes and substrate temperature during growth is conducted to optimize the 2DHG transport. These conditions are adopted for the growth on 2 in. wafer substrates. The obtained results represent a step forward towards achieving a GaN/AlN 2DHG platform for high‐performance wide‐bandgap p‐channel field effect transistors (FETs). 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Save / Share this Record
  • Send to Email