Material objects with micrometer or nanometer dimensions can exhibit much higher strength than macroscopic objects, but this strength rarely approaches the maximum theoretical strength of the material. Here, we demonstrate that faceted single-crystalline nickel (Ni) nanoparticles exhibit an ultrahigh compressive strength (up to 34 GPa) unprecedented for metallic materials. This strength matches the available estimates of Ni theoretical strength. Three factors are responsible for this record-high strength: the large Ni shear modulus, the smooth edges and corners of the nanoparticles, and the thin oxide layer on the particle surface. This finding is supported by molecular dynamics simulations that closely mimic the experimental conditions, which show that the mechanical failure of the strongest particles is triggered by homogeneous nucleation of dislocation loops inside the particle. The nucleation of a stable loop is preceded by multiple nucleation attempts accompanied by unusually large local atomic displacements caused by thermal fluctuations.
Although hydrogen embrittlement has been observed and extensively studied in a wide variety of metals and alloys, there still exist controversies over the underlying mechanisms and a fundamental understanding of hydrogen embrittlement in nanostructures is almost non-existent. Here we use metallic nanowires (NWs) as a platform to study hydrogen embrittlement in nanostructures where deformation and failure are dominated by dislocation nucleation. Based on quantitative in-situ transmission electron microscopy nanomechanical testing and molecular dynamics simulations, we report enhanced yield strength and a transition in failure mechanism from distributed plasticity to localized necking in penta-twinned Ag NWs due to the presence of surface-adsorbed hydrogen. In-situ stress relaxation experiments and simulations reveal that the observed embrittlement in metallic nanowires is governed by the hydrogen-induced suppression of dislocation nucleation at the free surface of NWs.
more » « less- Award ID(s):
- 1709318
- NSF-PAR ID:
- 10153390
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 10
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Zinc oxide (ZnO) nanowires are widely studied for use in ultraviolet optoelectronic devices, such as nanolasers and sensors. Nanowires (NWs) with an MgO shell exhibit enhanced band‐edge photoluminescence (PL), a result previously attributed to passivation of ZnO defects. However, we find that processing the ZnO NWs under low oxygen partial pressure leads to an MgO‐thickness‐dependent PL enhancement owing to the formation of optical cavity modes. Conversely, processing under higher oxygen partial pressure leads to NWs that support neither mode formation nor band‐edge PL enhancement. High‐resolution electron microscopy and density‐functional calculations implicate the ZnO
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Heterogeneous self-assembly of III–V nanostructures on inert two-dimensional monolayer materials enables novel hybrid nanosystems with unique properties that can be exploited for low-cost and low-weight flexible optoelectronic and nanoelectronic device applications. Here, the pseudo-van der Waals epitaxy (vdWE) growth parameter space for heterogeneous integration of InAs nanowires (NWs) with continuous films of single layer graphene (SLG) via metalorganic chemical vapor deposition (MOCVD) is investigated. The length, diameter, and number density of NWs, as well as areal coverage of parasitic islands, are quantified as functions of key growth variables including growth temperature, V/III ratio, and total flow rate of metalorganic and hydride precursors. A compromise between self-assembly of high aspect ratio NWs comprising high number density arrays and simultaneous minimization of parasitic growth coverage is reached under a selected set of optimal growth conditions. Exploration of NW crystal structures formed under various growth conditions reveals that a characteristic polytypic and disordered lattice is invariant within the explored parameter space. A growth evolution study reveals a gradual reduction in both axial and radial growth rates within the explored timeframe for the optimal growth conditions, which is attributed to a supply-limited competitive growth regime. Two strategies are introduced for further growth optimization. Firstly, it is shown that the absence of a pre-growth in situ arsine surface treatment results in a reduction of parasitic island coverage by factor of ∼0.62, while NW aspect ratio and number densities are simultaneously enhanced. Secondly, the use of a two-step flow-modulated growth procedure allows for realization of dense fields of high aspect ratio InAs NWs. As a result of the applied studies and optimization of the growth parameter space, the highest reported axial growth rate of 840 nm min −1 and NW number density of ∼8.3 × 10 8 cm −2 for vdWE of high aspect ratio (>80) InAs NW arrays on graphitic surfaces are achieved. This work is intended to serve as a guide for vdWE of self-assembled III–V semiconductor NWs such as In-based ternary and quaternary alloys on functional two-dimensional monolayer materials, toward device applications in flexible optoelectronics and tandem-junction photovoltaics.more » « less
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