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In this paper, we report the molecular beam epitaxy-grown InGaN-quantum disks embedded within selective area epitaxy of GaN nanowires with both Ga- and N-polarities. A detailed comparative analysis of these two types of nanostructures is also provided. Compared to Ga-polar nanowires, N-polar nanowires are found to exhibit a higher vertical growth rate, flatter top, and reduced lateral overgrowth. InGaN quantum disk-related optical emission is observed from nanowires with both polarities; however, the N-polar structures inherently emit at longer wavelengths due to higher indium incorporation. Considering that N-polar nanowires offer more compelling geometry control compared to Ga-polar ones, we focus on the theoretical analysis of only N-polar structures to realize high-performance quantum emitters. A single nanowire-level analysis was performed, and the effects of nanowire diameter, taper length, and angle on guided modes, light extraction, and far-field emission were investigated. These findings highlight the importance of tailoring nanowire geometry and eventually optimizing the growth processes of III-nitride nanostructures.
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Mechanism of silicon-nanowire-diode orientation in DC electric fields
Doped semiconductor nanowires are emerging as next-generation electronic colloidal materials, and the efficient manipulation of such nanostructures is crucial for technological applications. In fluid suspension, pn nanowires (pn NWs), unlike homogeneous nanowires, have a permanent dipole, and thus, experience a torque under an external DC field that orients the nanowire with its n-type end in the direction of the field. Here, we quantitatively measure the permanent dipoles of various Si nanowire pn diodes and investigate their origin. By comparing the dipoles of pn NWs of different lengths and radii, we show that the permanent dipole originates from non-uniform surface-charge distributions, rather than the internal charges at the p–n junction as was previously proposed. This understanding of the mechanism for pn NWs orientation has relevance to the manipulation, assembly, characterization, and separation of nanowire electronics by electric fields.
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- PAR ID:
- 10526910
- Publisher / Repository:
- AIP
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 123
- Issue:
- 14
- ISSN:
- 0003-6951
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1063/5.0165100
