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1. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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2. Global perspectives of the bulk electronic structure of URu 2 Si 2 from angle-resolved photoemission

   https://doi.org/10.1088/2516-1075/ac4315  

   Denlinger, J. D. ; Kang, J-S ; Dudy, L. ; Allen, J. W. ; Kim, Kyoo ; Shim, J-H ; Haule, K. ; Sarrao, J. L. ; Butch, N. P. ; Maple, M. B. ( January 2022 , Electronic Structure)

   Previous high-resolution angle-resolved photoemission (ARPES) studies of URu₂Si₂have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level (E_F) at low photon energies near the zone center, with an emphasis on electronic reconstruction due to Brillouin zone folding. A substantial challenge to a proper description is that these states interact with other hole-band states that are generally absent from bulk-sensitive soft x-ray ARPES measurements. Here we provide a more globalk-space context for the presence of such states and their relation to the bulk Fermi surface (FS) topology using synchrotron-based wide-angle and photon energy-dependent ARPES mapping of the electronic structure using photon energies intermediate between the low-energy regime and the high-energy soft x-ray regime. Small-spot spatial dependence,f-resonant photoemission, Si 2pcore-levels, x-ray polarization, surface-dosing modification, and theoretical surface slab calculations are employed to assist identification of bulk versus surface state character of theE_F-crossing bands and their relation to specific U- or Si-terminations of the cleaved surface. The bulk FS topology is critically compared to density functional theory (DFT) and to dynamical mean field theory calculations. In addition to clarifying some aspects of the previously measured high symmetry Γ,ZandXpoints, incommensurate 0.6a* nested Fermi-edge states located alongZ–N–Zare found to be distinctly different from the DFT FS prediction. The temperature evolution of these states aboveT_HO, combined with a more detailed theoretical investigation of this region, suggests a key role of theN-point in the hidden order transition.

    

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3. Laboratory Study of the Cameron Bands and UV Doublet in the Middle Ultraviolet 180–300 nm by Electron Impact upon CO 2 with Application to Mars

   https://doi.org/10.3847/1538-4357/ac88c8  

   Lee, Rena A. ; Ajello, Joseph M. ; Malone, Charles P. ; Evans, J. Scott ; Veibell, Victoir ; Holsclaw, Gregory M. ; McClintock, William E. ; Hoskins, Alan C. ; Jain, Sonal K. ; Gérard, Jean-Claude ; et al ( October 2022 , The Astrophysical Journal)

   We have observed electron impact fluorescence from CO₂to excite the Cameron bands (CBs), CO (a³Π →X¹Σ⁺; 180–280 nm), the first-negative group (1NG) bands, CO⁺(B²Σ⁺→X²Σ⁺; 180–320 nm), the fourth-positive group (4PG) bands, CO (A¹Π →X¹Σ⁺; 111–280 nm), and the UV doublet, CO₂⁺($\tilde{B}{}^2{\mathrm{\Sigma }}_u^{+}\to \tilde{X}{}^2{\mathrm{\Pi }}_g;$288.3 and 289.6 nm) in the ultraviolet (UV). This wavelength range matches the spectral region of past and present spacecraft equipped to observe UV dayglow and aurora emissions from the thermospheres (100–300 km) of Mars and Venus. Our large vacuum system apparatus is able to measure the emission cross sections of the strongest optically forbidden UV transitions found in planetary spectra. Based on our cross-sectional measurements, previous CB emission cross-sectional errors exceed a factor of 3. The UV doublet lifetime is perturbed through$\tilde{B}{}^2{\mathrm{\Sigma }}_u^{+}-\tilde{A}{}^2{\mathrm{\Pi }}_u$spin–orbit coupling. Forward modeling codes of the Mars dayglow have not been accurate in the mid-UV due to systematic errors in these two emission cross sections. We furnish absolute emission cross sections for several band systems over electron energies 20–100 eV for CO₂. We present a CB lifetime, which together with emission cross sections, furnish a set of fundamental physical constants for electron transport codes such as AURIC (Atmospheric Ultraviolet Radiance Integrated Code). AURIC and Trans-Mars are used in the analysis of UV spectra from the Martian dayglow and aurora.

    

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4. Excited-state resonance Raman spectroscopy probes the sequential two-photon excitation mechanism of a photochromic molecular switch

   https://doi.org/10.1063/5.0126974  

   Burns, Kristen H. ; Quincy, Timothy J. ; Elles, Christopher G. ( December 2022 , The Journal of Chemical Physics)

   Some diarylethene molecular switches have a low quantum yield for cycloreversion when excited by a single photon, but react more efficiently following sequential two-photon excitation. The increase in reaction efficiency depends on both the relative time delay and the wavelength of the second photon. This paper examines the wavelength-dependent mechanism for sequential excitation using excited-state resonance Raman spectroscopy to probe the ultrafast (sub-30 fs) dynamics on the upper electronic state following secondary excitation. The approach uses femtosecond stimulated Raman scattering (FSRS) to measure the time-gated, excited-state resonance Raman spectrum in resonance with two different excited-state absorption bands. The relative intensities of the Raman bands reveal the initial dynamics in the higher-lying states, Sn, by providing information on the relative gradients of the potential energy surfaces that are accessed via secondary excitation. The excited-state resonance Raman spectra reveal specific modes that become enhanced depending on the Raman excitation wavelength, 750 or 400 nm. Many of the modes that become enhanced in the 750 nm FSRS spectrum are assigned as vibrational motions localized on the central cyclohexadiene ring. Many of the modes that become enhanced in the 400 nm FSRS spectrum are assigned as motions along the conjugated backbone and peripheral phenyl rings. These observations are consistent with earlier measurements that showed higher efficiency following secondary excitation into the lower excited-state absorption band and illustrate a powerful new way to probe the ultrafast dynamics of higher-lying excited states immediately following sequential two-photon excitation. 

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5. Band structure and polarization effects in photothermoelectric spectroscopy of a Bi 2 Se 3 device

   https://doi.org/10.1063/5.0075924  

   Pournia, Seyyedesadaf ; Jnawali, Giriraj ; Need, Ryan F. ; Jackson, Howard E. ; Wilson, Stephen D. ; Smith, Leigh M. ( March 2022 , Applied Physics Letters)

   Bi₂Se₃is a prototypical topological insulator, which has a small bandgap (∼0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here, we show in a mechanically exfoliated thick (∼100 nm) nanoflake device that we can measure the energy dependent optical absorption through the photothermoelectric effect. Spectral signatures are seen for a number of optical transitions between the valence and conduction bands, including a broad peak at 1.5 eV, which is likely dominated by bulk band-to-band optical transitions but is at the same energy as the well-known optical transition between the two topologically protected conducting surface states. We also observe a surprising linear polarization dependence in the response of the device that reflects the influence of the metal contacts.

    

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