We present a novel semiconductor single-photon source based on tensile-strained (111)-oriented GaAs/InAlAs quantum dots (QDs) exhibiting ultrasmall exciton fine-structure splitting (FSS) of ≤ 8
Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness
Driven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we can continually increase WL thickness with increasing GaAs deposition, even after the tensile-strained QDs (TSQDs) have begun to form. This anomalous SK behavior enables simultaneous tuning of both TSQD size and WL thickness. No such departure from the canonical SK growth regime has been reported previously. As such, we can now modify QD-WL interactions, with future benefits that include more precise control of TSQD band structure for infrared optoelectronics and quantum optics applications.
more » « less- Award ID(s):
- 1806311
- NSF-PAR ID:
- 10153799
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Scientific Reports
- Volume:
- 9
- Issue:
- 1
- ISSN:
- 2045-2322
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract µ eV. Using low-temperature micro-photoluminescence spectroscopy, we identify the biexciton-exciton radiative cascade from individual QDs, which, combined with small FSS, indicates these self-assembled GaAs(111) QDs are excellent candidates for polarization-entangled photon-pair generation. -
more » « less
Abstract Deterministic positioning single site-controlled high symmetric InGaAs quantum dots (QDs) in (111)B-oriented GaAs photonic crystal cavities with nanometer-scale accuracy provides an idea component for building integrated quantum photonic circuits. However, it has been a long-standing challenge of improving cavity
Q -factors in such systems. Here, by optimizing the trade-off between the cavity loss and QD spectral quality, we demonstrate our site-controlled QD-nanocavity system operating in the intermediate coupling regime mediated by phonon scattering, with the dynamic coexistence of strong and weak coupling. The cavity-exciton detuning-dependent micro-photoluminescence spectrum reveals concurrence of a trend of exciton-polariton mode avoided crossing, as a signature of Rabi doublet of the strongly coupled system. Meanwhile, a trend of keeping constant or slight blue shift of coupled exciton–cavity mode(CM) energy across zero-detuning is ascribed to the formation of collective states mediated by phonon-assisted coupling, and their rare partial out-of-synchronization linewidth-narrowing is linked to their coexisting strong-weak coupling regime. We further reveal the pump power-dependent anti-bunching photon statistical dynamics of this coexisting strong-weak coupled system and the optical features of strongly confined exciton-polaritons, and dark-exciton-like states. These observations demonstrate the potential capabilities of site-controlled QD-cavity systems as deterministic quantum nodes for on-chip quantum information processing and provide guidelines for future device optimization for achieving the strong coupling regime. -
more » « less
Abstract We report the growth of self-assembled Bi2Se3quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray reflectance spectroscopy is presented. Raman spectra confirm the QD quality. The quantum dots are crystalline, with hexagonal shape, and have average dimensions of 12-nm height (12 quintuple layers) and 46-nm width, and a density of 8.5 × 109 cm−2. This droplet growth technique provides a means to produce topological insulator QDs in a reproducible and controllable way, providing convenient access to a promising quantum material with singular spin properties.
-
more » « less
Near-infrared electroluminescence of InGaN quantum dots (QDs) formed by controlled growth on photoelectrochemical (PEC) etched QD templates is demonstrated. The QD template consists of PEC InGaN QDs with high density and controlled sizes, an AlGaN capping layer to protect the QDs, and a GaN barrier layer to planarize the surface. Scanning transmission electron microscopy (STEM) of Stranski–Krastanov (SK) growth on the QD template shows high-In-content InGaN QDs that align vertically to the PEC QDs due to localized strain. A high-Al-content
capping layer prevents the collapse of the SK QDs due to intermixing or decomposition during higher temperature GaN growth as verified by STEM. Growth of low-temperature (830°C) p-type layers is used to complete the p-n junction and further ensure QD integrity. Finally, electroluminescence shows a significant wavelength shift (800 nm to 500 nm), caused by the SK QDs’ tall height, high In content, and strong polarization-induced electric fields. -
null (Ed.)InAs quantum dots (QDs) embedded into a waveguiding GaAs semiconductor matrix may produce scintillation detectors with exceptional speed and yield, making them valuable for nuclear security, medical imaging, and high energy physics applications. In this work, we developed thick (~25um) epitaxial heterostructres with high luminescence efficiency composed of self-assembled nano-engineered InAs QDs grown by molecular beam epitaxy. The bulk GaAs acts as a stopping material for incident particles and as a waveguide when layer-transferred onto a low-index substrate. Waveguiding and self-absorption (<1cm-1) were studied using photoluminescence with scanning laser excitation and modeled with ray optics approximation and geometrical coupling of high-index waveguide to a collection fiber. Scintillating signals from alpha-particles were analyzed with an external photodiode (PD) and an integrated PD which provided an improved optical coupling. The mean charge collected by the integrated PD corresponded to 5×1e4 photoelectrons per 1 MeV of deposited energy, or ~20% of the theoretically achievable light yield. Combined with the previously measured QD scintillation time of 0.3-0.6 ns, this makes the InAs/GaAs QD heterostructures the fastest high yield scintillation material reported.more » « less
