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1. GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

   https://doi.org/10.1364/OL.45.000121  

   Wei, Tongbo; Islam, S_M; Jahn, Uwe; Yan, Jianchang; Lee, Kevin; Bharadwaj, Shyam; Ji, Xiaoli; Wang, Junxi; Li, Jinmin; Protasenko, Vladimir; et al (December 2019, Optics Letters)

   We report optically and electrically pumped $\sim <\#comment/>280\mathrm{n}\mathrm{m}$deep ultraviolet (DUV) light emitting diodes (LEDs) with ultra-thin GaN/AlN quantum disks (QDs) inserted into AlGaN nanorods by selective epitaxial regrowth using molecular beam epitaxy. The GaN/AlN QD LED has shown strong DUV emission distribution on the ordered nanorods and high internal quantum efficiency of 81.2%, as a result of strain release and reduced density of threading dislocations revealed by transmission electron microscopy. Nanorod assembly suppresses the lateral guiding mode of light, and light extraction efficiency can be increased from 14.9% for planar DUV LEDs to 49.6% for nanorod DUV LEDs estimated by finite difference time domain simulations. Presented results offer the potential to solve the issue of external quantum efficiency limitation of DUV LED devices. 

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2. Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

   https://doi.org/10.3390/ma16051890  

   Wei, Xiongliang; Al Muyeed, Syed Ahmed; Xue, Haotian; Wierer, Jonathan J. (March 2023, Materials)

   Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemical (PEC) etching with coherent light has been developed. Anisotropic etching of InGaN thin films is demonstrated here with PEC etching. InGaN films are etched in dilute H2SO4 and exposed to a pulsed 445 nm laser with a 100 mW/cm2 average power density. Two potentials (0.4 V or 0.9 V) measured with respect to an AgCl|Ag reference electrode are applied during PEC etching, resulting in different QDs. Atomic force microscope images show that while the QD density and sizes are similar for both applied potentials, the heights are more uniform and match the initial InGaN thickness at the lower applied potential. Schrodinger-Poisson simulations show that polarization-induced fields in the thin InGaN layer prevent positively charged carriers (holes) from arriving at the c-plane surface. These fields are mitigated in the less polar planes resulting in high etch selectivity for the different planes. The higher applied potential overcomes the polarization fields and breaks the anisotropic etching. 

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3. Quantum group intertwiner space from quantum curved tetrahedron

   https://doi.org/10.1088/1361-6382/ad5f71  

   Han, Muxin; Hsiao, Chen-Hung; Pan, Qiaoyin (July 2024, Classical and Quantum Gravity)

   Abstract In this paper, we develop a quantum theory of homogeneously curved tetrahedron geometry, by applying the combinatorial quantization to the phase space of tetrahedron shapes defined in Haggardet al(2016Ann. Henri Poincaré172001–48). Our method is based on the relation between this phase space and the moduli space of SU(2) flat connections on a 4-punctured sphere. The quantization results in the physical Hilbert space as the solution of the quantum closure constraint, which quantizes the classical closure condition $M_4{M}_3{M}_2{M}_1=1$, $M_{\nu }\in \mathrm{SU}\left(2\right)$, for the homogeneously curved tetrahedron. The quantum group $U_q\left(\mathfrak{su}\right(2\left)\right)$emerges as the gauge symmetry of a quantum tetrahedron. The physical Hilbert space of the quantum tetrahedron coincides with the Hilbert space of 4-valent intertwiners of $U_q\left(\mathfrak{su}\right(2\left)\right)$. In addition, we define the area operators quantizing the face areas of the tetrahedron and compute the spectrum. The resulting spectrum is consistent with the usual Loop-Quantum-Gravity area spectrum in the large spin regime but is different for small spins. This work closely relates to 3+1 dimensional Loop Quantum Gravity in presence of cosmological constant and provides a justification for the emergence of quantum group in the theory. 

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4. High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation

   https://doi.org/10.1364/AO.400877  

   Bui, Ha_Quoc_Thang; Velpula, Ravi_Teja; Jian, Barsha; Philip, Moab_Rajan; Tong, Hien_Duy; Lenka, Trupti_Rajan; Nguyen, Hieu_Pham_Trung (August 2020, Applied Optics)

   Potassium hydroxide (KOH) and ammonium sulfide $({\mathrm{N}\mathrm{H}}_4{)}_2{\mathrm{S}}_x$have been used as a surface passivation treatment to improve the electrical and optical performance of AlGaN nanowire ultraviolet (UV) light-emitting diodes (LEDs). Enhancements in photoluminescence at 335 nm (49%), optical output power (65%), and electroluminescence (83%), with respect to the as-grown nanowire LED are recorded for the AlGaN nanowire UV LEDs with surface passivation. These enhancements are attributed to the reduced nonradiative recombination on the nanowire surfaces. This study provides a potential surface passivation approach to produce high-power AlGaN nanowire LEDs operating in the UV spectrum. 

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5. Size dependence- and induced transformations- of fractional quantum Hall effects under tilted magnetic fields

   https://doi.org/10.1038/s41598-022-22812-x  

   Wijewardena, U. Kushan; Nanayakkara, Tharanga R.; Kriisa, Annika; Reichl, Christian; Wegscheider, Werner; Mani, Ramesh G. (November 2022, Scientific Reports)

   Abstract Two-dimensional electron systems subjected to high transverse magnetic fields can exhibit Fractional Quantum Hall Effects (FQHE). In the GaAs/AlGaAs 2D electron system, a double degeneracy of Landau levels due to electron-spin, is removed by a small Zeeman spin splitting,$$g \mu _B B$$ $g{\mu }_{B}B$, comparable to the correlation energy. Then, a change of the Zeeman splitting relative to the correlation energy can lead to a re-ordering between spin polarized, partially polarized, and unpolarized many body ground states at a constant filling factor. We show here that tuning the spin energy can produce fractionally quantized Hall effect transitions that include both a change in$$\nu$$ $\nu$for the$$R_{xx}$$ $R_{\mathrm{xx}}$minimum, e.g., from$$\nu = 11/7$$ $\nu =11/7$to$$\nu = 8/5$$ $\nu =8/5$, and a corresponding change in the$$R_{xy}$$ $R_{\mathrm{xy}}$, e.g., from$$R_{xy}/R_{K} = (11/7)^{-1}$$ $R_{\mathrm{xy}}/R_K={(11/7)}^{-1}$to$$R_{xy}/R_{K} = (8/5)^{-1}$$ $R_{\mathrm{xy}}/R_K={(8/5)}^{-1}$, with increasing tilt angle. Further, we exhibit a striking size dependence in the tilt angle interval for the vanishing of the$$\nu = 4/3$$ $\nu =4/3$and$$\nu = 7/5$$ $\nu =7/5$resistance minima, including “avoided crossing” type lineshape characteristics, and observable shifts of$$R_{xy}$$ $R_{\mathrm{xy}}$at the$$R_{xx}$$ $R_{\mathrm{xx}}$minima- the latter occurring for$$\nu = 4/3, 7/5$$ $\nu =4/3,7/5$and the 10/7. The results demonstrate both size dependence and the possibility, not just of competition between different spin polarized states at the same$$\nu$$ $\nu$and$$R_{xy}$$ $R_{\mathrm{xy}}$, but also the tilt- or Zeeman-energy-dependent- crossover between distinct FQHE associated with different Hall resistances. 

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