skip to main content


Title: Thick Film Ni0.5Mn0.5−xSnx Heusler Alloys by Multi-layer Electrochemical Deposition
Abstract

The design of multifunctional alloys with multiple chemical components requires controllable synthesis approaches. Physical vapor deposition techniques, which result in thin films (<1 μm), have previously been demonstrated for micromechanical devices and metallic combinatorial libraries. However, this approach deviates from bulk-like properties due to the residual stress derived in thin films and is limited by total film thickness. Here, we report a route to obtain ternary Ni-Mn-Sn alloy thick films with controllable compositions and thicknesses by annealing electrochemically deposited multi-layer monatomic (Ni, Mn, Sn) films, deposited sequentially from separate aqueous deposition baths. We demonstrate (1) controllable compositions, with high degree of uniformity, (2) smooth films, and (3) high reproducibility between film transformation behavior. Our results demonstrate a positive correlation between alloy film thicknesses and grain sizes, as well as consistent bulk-like transformation behavior.

 
more » « less
Award ID(s):
1636105
NSF-PAR ID:
10154350
Author(s) / Creator(s):
;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Scientific Reports
Volume:
8
Issue:
1
ISSN:
2045-2322
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    In an effort to reconcile the various interpretations for the cation components of the 2p3/2observed in x-ray photoelectron spectroscopy (XPS) of several spinel oxide materials, the XPS spectra of both spinel alloy nanoparticles and crystalline thin films are compared. We observed that different components of the 2p3/2core level XPS spectra, of these inverse spinel thin films, are distinctly surface and bulk weighted, indicating surface-to-bulk core level shifts in the binding energies. Surface-to-bulk core level shifts in binding energies of Ni and Fe 2p3/2core levels of NiFe2O4thin film are observed in angle-resolved XPS. The ratio between surface-weighted components and bulk-weighted components of the Ni and Fe core levels shows appreciable dependency on photoemission angle, with respect to surface normal. XPS showed that the ferrite nanoparticles NixCo1−xFe2O4(x= 0.2, 0.5, 0.8, 1) resemble the surface of the NiFe2O4thin film. Surface-to-bulk core level shifts are also observed in CoFe2O4and NiCo2O4thin films but not as significantly as in NiFe2O4thin film. Estimates of surface stoichiometry of some spinel oxide nanoparticles and thin films suggested that the apportionment between cationic species present could be farther from expectations for thin films as compared to what is seen with nanoparticles.

     
    more » « less
  2. Bi 3 MoM T O 9 (BMoM T O; M T , transition metals of Mn, Fe, Co and Ni) thin films with a layered supercell structure have been deposited on LaAlO 3 (001) substrates by pulsed laser deposition. Microstructural analysis suggests that pillar-like domains with higher transition metal concentration ( e.g. , Mn, Fe, Co and Ni) are embedded in the Mo-rich matrix with layered supercell structures. The layered supercell structure of the BMoM T O thin films accounts for the anisotropic multifunctionalities such as the magnetic easy axis along the in-plane direction, and the anisotropic optical properties. Ferroelectricity and ferromagnetism have been demonstrated in the thin films at room temperature, which confirms the multiferroic nature of the system. By varying the transition metal M T in the film, the band gaps of the BMoM T O films can be effectively tuned from 2.44 eV to 2.82 eV, while the out-of-plane dielectric constant of the thin films also varies. The newly discovered layered nanocomposite systems present their potential in ferroelectrics, multiferroics and non-linear optics. 
    more » « less
  3. Multilayered thermoelectric Sn/Sn+SnO2 thin films were prepared using KJL DC/RF magnetron sputtering system under Ar gas plasma on the SiO2 substrates. The thicknesses of the fabricated thin films were found using Filmetrics UV thickness measurement system. The fabricated thin films were annealed at different temperatures for one hour to tailor the thermoelectric properties. In this study, unannealed, annealed at 150 and 300 °C samples were characterized using Thermo Fisher XPS system brought to the Alabama A&M University by the NSF-MRI support. X-ray Photoelectron Spectroscopy (XPS), also known as Electron Spectroscopy for Chemical Analysis (ESCA) is a type of analysis used for characterization of various surface materials. XPS is mostly known for the characterization of thin films - which are coatings that have been deposited onto a substrate and may be comprised of many different materials to alter or enhance the substrate’s performance. XPS analysis provides information for composition, chemical states, depth profile, imaging and thickness of thin film. This paper focuses on the application of XPS techniques in thin film research for Sn/Sn+SnO2 multilayered thermoelectric system and SiO2 substrates annealed at different temperatures. Since SiO2 substrates were used during the deposition of the multilayer thin films, we would like to perform detailed XPS studies on the SiO2 substrates. SiO2 substrates is being used with many researchers, this manuscript will be good reference for the researchers using SiO2 substrates. Thermal treatment of the substrates and the multilayered thin films has caused some changes of the XPS characterization including binding energy, depth profile, peak value and FWHM. The treatment effects were discussed and compared to each other. 
    more » « less
  4. Abstract We report closed-form formulas to calculate the incremental-deposition stress, the elastic relaxation stress, and the residual stress in a finite-thickness film from a wafer-curvature measurement. The calculation shows how the incremental deposition of a new stressed layer to the film affects the amount of the film/wafer curvature and the stress state of the previously deposited layers. The formulas allow the incremental-deposition stress and the elastic relaxation to be correctly calculated from the slope of the measured curvature versus thickness for arbitrary thicknesses and biaxial moduli of the film and the substrate. Subtraction of the cumulative elastic relaxation from the incremental-deposition stress history results in the residual stress left in the film after the whole deposition process. The validities of the formulas are confirmed by curvature measurements of electrodeposited Ni films on substrates with different thicknesses. 
    more » « less
  5. Two distinct ultra-thin Ge1−xSnx (x ≤ 0.1) epilayers were deposited on (001) Si substrates at 457 and 313 °C through remote plasma-enhanced chemical vapor deposition. These films are considered potential initiation layers for synthesizing thick epitaxial GeSn films. The GeSn film deposited at 313 °C has a thickness of 10 nm and exhibits a highly epitaxial continuous structure with its lattice being compressed along the interface plane to coherently match Si without mismatch dislocations. The GeSn film deposited at 457 °C exhibits a discrete epitaxial island-like morphology with a peak height of ∼30 nm and full-width half maximum (FWHM) varying from 20 to 100 nm. GeSn islands with an FWHM smaller than 20 nm are defect free, whereas those exceeding 25 nm encompass nanotwins and/or stacking faults. The GeSn islands form two-dimensional modulated superlattice structures at the interface with Si. The GeSn film deposited at 457 °C possesses a lower Sn content compared to the one deposited at lower temperature. The potential impact of using these two distinct ultra-thin layers as initiation layers for the direct growth of thicker GeSn epitaxial films on (001) Si substrates is discussed.

     
    more » « less