Reactions of Ge with S vapor, of interest as a potential approach for forming thin passivation layers on Ge surfaces, have been studied by photoelectron spectroscopy and Raman spectroscopy. Exposure of Ge(100) and Ge(111) to S drives the formation of Ge sulfide near-surface layers. At low temperatures, the reaction products comprise a thin GeS interlayer terminated by near-surface GeS 2 . Above 400 °C, exposure to sulfur gives rise to single-phase GeS 2 layers whose thickness increases with temperature. Arrhenius analysis of the GeS 2 thickness yields an activation energy (0.63 ± 0.08) eV, close to the barrier that controls Ge oxidation by O radicals. XPS measurements after extended ambient exposure show a stable, ultrathin near-surface GeS 2 without significant oxidation, indicating that Ge–sulfides may provide an effective surface passivation for Ge surfaces.
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Formation of Ge–GeS core–shell nanostructures via solid-state sulfurization of Ge nanowires
Germanium nanowires (NWs) have attractive properties for a variety of applications, including micro- and optoelectronics, memory devices, solar energy conversion, and energy storage, among others. For applications that involve exposure to air, the poor chemical stability and electronic surface passivation of native oxides have remained a long-standing concern. Termination by sulfur-rich surface layers has emerged as a promising strategy for passivation of planar Ge surfaces. Here we discuss experiments on solid-state sulfurization of Ge nanowires in sulfur vapor at near-ambient pressures and at different temperatures. Combined transmission electron microscopy imaging and chemical mapping establishes that Ge NWs remain intact during vapor-phase reaction with S at elevated temperatures, and show the formation of sulfur-rich shells with T-dependent morphology and thickness on the Ge NW surface. Photoluminescence of ensembles of such core–shell nanowires is dominated by strong emission at ∼1.85 eV, consistent with luminescence of GeS. Cathodoluminescence spectroscopy on individual NWs establishes that this luminescence originates in thin GeS shells formed by sulfurization of the NWs. Our work establishes direct sulfurization as a viable approach for forming stable, wide-bandgap surface terminations on Ge NWs.
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- Award ID(s):
- 1607795
- NSF-PAR ID:
- 10155315
- Date Published:
- Journal Name:
- CrystEngComm
- Volume:
- 20
- Issue:
- 15
- ISSN:
- 1466-8033
- Page Range / eLocation ID:
- 2193 to 2200
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/C8CE00221E
