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1. Thickness dependent growth of Ge nanoparticles in amorphous Ge/SiO2 multilayers

   https://doi.org/10.1016/j.vacuum.2021.110294  

   Pivac, B.; Dubček, P.; Zorc, H.; Bernstorff, S.; Vlahovic, B.; Zavašnik, J. (August 2021, Vacuum)
2. Relevance of the Nuclear Structure of the Stable Ge Isotopes to the Neutrino-less Double-Beta Decay of ⁷⁶ Ge

   https://doi.org/10.1051/epjconf/202023204011  

   Yates, S. W.; Peters, E. E.; Crider, B. P.; Mukhopadhyay, S.; Ramirez, A. P.; Mitchell, A.J.; Pavetich, S.; Koll, D. (January 2020, EPJ Web of Conferences)

   Gamma-ray detection following the inelastic neutron scattering reaction on isotopically enriched material was used to study the nuclear structure of 74 Ge. From these measurements, low-lying, low-spin excited states were characterized, new states and their decays were identified, level lifetimes were measured with the Doppler-shift attenuation method (DSAM), multipole mixing ratios were established, and transition probabilities were determined. New structural features in 74 Ge were identified, and the reanalysis of older 76 Ge data led to the placement of the 2 + member of the intruder band. In addition, a number of previously placed states in 74 Ge were shown not to exist. A procedure for future work, which will lead to meaningful data for constraining calculations of the neutrinoless double-beta decay matrix element, is suggested. 

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3. The nature of the DX state in Ge-doped AlGaN

   https://doi.org/10.1063/5.0008362  

   Bagheri, Pegah; Kirste, Ronny; Reddy, Pramod; Washiyama, Shun; Mita, Seiji; Sarkar, Biplab; Collazo, Ramón; Sitar, Zlatko (June 2020, Applied Physics Letters)
4. Excitonic effects at the temperature-dependent direct bandgap of Ge

   https://doi.org/10.1063/5.0080158  

   Emminger, Carola; Samarasingha, Nuwanjula S.; Rivero Arias, Melissa; Abadizaman, Farzin; Menéndez, José; Zollner, Stefan (April 2022, Journal of Applied Physics)

   The temperature dependence of the complex dielectric function [Formula: see text] of bulk Ge near the direct bandgap was investigated with spectroscopic ellipsometry at temperatures between 10 and 710 K. Second derivatives of the dielectric function with respect to energy are obtained using a digital linear filter method. A model that incorporates excitonic effects using the Tanguy model for the Hulthén potential [C. Tanguy, Phys. Rev. B 60, 10660 (1999)] was used to fit the dielectric function and its second derivatives simultaneously. Using [Formula: see text] theory and literature values for effective masses, reasonable agreement with the experiment is obtained for [Formula: see text] up to room temperature using the direct bandgap and its broadening as the only adjustable parameters. 

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5. Observations of the Ag(3 × 1) phase on Ge(111)

   https://doi.org/10.1116/6.0001183  

   Mullet, Cory H.; Rosen, Anna L.; Chiang, Shirley (September 2021, Journal of Vacuum Science & Technology A)