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1. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

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2. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi_Teja; Jain, Barsha; Velpula, Swetha; Nguyen, Hoang-Duy; Nguyen, Hieu_Pham_Trung (September 2020, Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic ${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by $\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by $\sim <\#comment/>11$times, and enhances optical power by $\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of $\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is $\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is $\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is $\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at $\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters. 

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3. Algebraic cobordism and a Conner–Floyd isomorphism for algebraic K-theory

   https://doi.org/10.1090/jams/1045  

   Annala, Toni; Hoyois, Marc; Iwasa, Ryomei (March 2024, Journal of the American Mathematical Society)

   We formulate and prove a Conner–Floyd isomorphism for the algebraic K-theory of arbitrary qcqs derived schemes. To that end, we study a stable $\mathrm{\infty <\#comment/>}$-category of non- ${\mathbb{A}}^1$-invariant motivic spectra, which turns out to be equivalent to the $\mathrm{\infty <\#comment/>}$-category of fundamental motivic spectra satisfying elementary blowup excision, previously introduced by the first and third authors. We prove that this $\mathrm{\infty <\#comment/>}$-category satisfies ${\mathbb{P}}^1$-homotopy invariance and weighted ${\mathbb{A}}^1$-homotopy invariance, which we use in place of ${\mathbb{A}}^1$-homotopy invariance to obtain analogues of several key results from ${\mathbb{A}}^1$-homotopy theory. These allow us in particular to define a universal oriented motivic ${\mathbb{E}}_{\mathrm{\infty <\#comment/>}}$-ring spectrum $\mathrm{M}\mathrm{G}\mathrm{L}$. We then prove that the algebraic K-theory of a qcqs derived scheme $X$can be recovered from its $\mathrm{M}\mathrm{G}\mathrm{L}$-cohomology via a Conner–Floyd isomorphism\[ ${\mathrm{M}\mathrm{G}\mathrm{L}}^{\ast <\#comment/>\ast <\#comment/>}\left(X\right){\otimes <\#comment/>}_{\mathrm{L}}\mathbb{Z}\left[{\mathrm{\beta <\#comment/>}}^{\pm <\#comment/>1}\right]\simeq <\#comment/>\mathrm{K}{}^{\ast <\#comment/>\ast <\#comment/>}\left(X\right),$\]where $\mathrm{L}$is the Lazard ring and $\mathrm{K}{}^{p,q}\left(X\right)=\mathrm{K}{}_{2q-<\#comment/>p}\left(X\right)$. Finally, we prove a Snaith theorem for the periodized version of $\mathrm{M}\mathrm{G}\mathrm{L}$. 

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4. Quasi-monolithic heterodyne laser interferometer for inertial sensing

   https://doi.org/10.1364/OL.473476  

   Zhang, Yanqi; Guzman, Felipe (September 2022, Optics Letters)

   We present a compact heterodyne laser interferometer developed for high-sensitivity displacement sensing applications. This interferometer consists of customized prisms and wave plates assembled as a quasi-monolithic unit to realize a miniaturized system. The interferometer design adopts a common-mode rejection scheme to provide a high rejection ratio to common environmental noise. Experimental tests in vacuum show a displacement sensitivity level of $11\mathrm{p}\mathrm{m}/\sqrt{\mathrm{H}\mathrm{z}}$at $100\mathrm{m}\mathrm{H}\mathrm{z}$and as low as $0.6\mathrm{p}\mathrm{m}/\sqrt{\mathrm{H}\mathrm{z}}$above $1\mathrm{p}\mathrm{m}$. The prototype unit is $20\mathrm{m}\mathrm{m}\times <\#comment/>20\mathrm{m}\mathrm{m}\times <\#comment/>10\mathrm{m}\mathrm{m}$in size and weighs $4.5\mathrm{g}$, allowing subsequent integration in compact systems. 

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5. Modifications of ion beam sputtered tantala thin films by secondary argon and oxygen bombardment

   https://doi.org/10.1364/AO.59.00A150  

   Yang, Le; Randel, Emmett; Vajente, Gabriele; Ananyeva, Alena; Gustafson, Eric; Markosyan, Ashot; Bassiri, Riccardo; Fejer, Martin; Menoni, Carmen (January 2020, Applied Optics)

   Amorphous tantala ( ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$) thin films were deposited by reactive ion beam sputtering with simultaneous low energy assist ${\mathrm{A}\mathrm{r}}^{+}$or ${\mathrm{A}\mathrm{r}}^{+}/{\mathrm{O}}_2^{+}$bombardment. Under the conditions of the experiment, the as-deposited thin films are amorphous and stoichiometric. The refractive index and optical band gap of thin films remain unchanged by ion bombardment. Around 20% improvement in room temperature mechanical loss and 60% decrease in absorption loss are found in samples bombarded with 100-eV ${\mathrm{A}\mathrm{r}}^{+}$. A detrimental influence from low energy ${\mathrm{O}}_2^{+}$bombardment on absorption loss and mechanical loss is observed. Low energy ${\mathrm{A}\mathrm{r}}^{+}$bombardment removes excess oxygen point defects, while ${\mathrm{O}}_2^{+}$bombardment introduces defects into the tantala films. 

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