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Title: Interface passivation to overcome shunting in semiconductor–catalyst junctions
High-performance mesoporous hematite photoanodes modified with a conductive water oxidation catalyst, Ni 0.75 Fe 0.25 O x H y , for photoelectrochemical water oxidation are limited by shunting. We present a general method to overcome shunting via the selective electrodeposition of a thin poly(phenylene oxide) (PPO) insulating layer onto the exposed transparent conductive oxide substrate following catalyst deposition.  more » « less
Award ID(s):
1664823
PAR ID:
10165195
Author(s) / Creator(s):
;
Date Published:
Journal Name:
Chemical Communications
Volume:
56
Issue:
17
ISSN:
1359-7345
Page Range / eLocation ID:
2570 to 2573
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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