Abstract Multi-functional thin films of boron (B) doped Cr 2 O 3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H . Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr 2 O 3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission,more »
The disordered and correlated insulator Bi2CrAl3O9
The 3d transition metal insulator Bi2CrAl3O9 forms with a quasi-one-dimensional structure characterized by linear chains of edge-sharing, Cr-and Al-centered, distorted octahedra. The UV/Vis spectrum of high-quality single crystals is marked by broad absorption edges corresponding to direct transitions across a 1.36-eV insulating gap. Measurements of dc magnetic susceptibility χ reveal a fluctuating moment of 2.60±0.01μB/Cr—reduced from the 3.87μB/Cr expected for Cr3+, while the Weiss temperature ΘW=−21±1 K implies that the prevailing local moment interactions are weakly antiferromagnetic in nature. Some 10% of the fluctuating moment is quenched, presumably due to the onset of an antiferromagnetic or spin glass phase at temperature T★=98±3 K, while measurements of magnetization versus field H at T≤10 K scale as H/T0.68(4), suggesting the presence of quantum fluctuations associated with a disordered phase. Density functional theory calculations carried out within the generalized gradient approximation are in excellent agreement with experimental results, asserting that short-range magnetic interactions remnant above T★ stabilize the insulating state
- Award ID(s):
- 1807451
- Publication Date:
- NSF-PAR ID:
- 10165618
- Journal Name:
- PRB
- Volume:
- 100
- Page Range or eLocation-ID:
- 104425
- ISSN:
- 2161-2684
- Sponsoring Org:
- National Science Foundation
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