Abstract Implementation of skyrmion based energy efficient and high-density data storage devices requires aggressive scaling of skyrmion size. Ferrimagnetic materials are considered to be a suitable platform for this purpose due to their low saturation magnetization (i.e. smaller stray field). However, this method of lowering the saturation magnetization and scaling the lateral size of skyrmions is only applicable where the skyrmions have a smaller lateral dimension compared to the hosting film. Here, we show by performing rigorous micromagnetic simulation that the size of skyrmions, which have lateral dimension comparable to their hosting nanodot can be scaled by increasing saturation magnetization. Also, when the lateral dimension of nanodot is reduced and thereby the skyrmion confined in it is downscaled, there remains a challenge in forming a stable skyrmion with experimentally observed Dzyaloshinskii–Moriya interaction (DMI) values since this interaction has to facilitate higher canting per spin to complete a 360° rotation along the diameter. In our study, we found that skyrmions can be formed in 20 nm lateral dimension nanodots with high saturation magnetization (1.30–1.70 MA/m) and DMI values (~ 3 mJ/m 2 ) that have been reported to date. This result could stimulate experiments on implementation of highly dense skyrmion devices. Additionally, using this, we show that voltage controlled magnetic anisotropy basedmore »
This content will become publicly available on December 1, 2022
Voltage controlled Néel vector rotation in zero magnetic field
Abstract Multi-functional thin films of boron (B) doped Cr 2 O 3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H . Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr 2 O 3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent T N and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr 2 O 3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.
- Award ID(s):
- 1740136
- Publication Date:
- NSF-PAR ID:
- 10302188
- Journal Name:
- Nature Communications
- Volume:
- 12
- Issue:
- 1
- ISSN:
- 2041-1723
- Sponsoring Org:
- National Science Foundation
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