Cadmium telluride (CdTe) solar cells are a promising photovoltaic (PV) technology for producing power in space owing to their high-efficiency (> 22.1 %), potential for specific power, and cost-effective manufacturing processes. In contrast to traditional space PVs, the high-Z (atomic number) CdTe absorbers can be intrinsically robust under extreme space radiation, offering long-term stability. Despite these advantages, the performance assessment of CdTe solar cells under high-energy particle irradiation (e.g., photons, neutrons, charged particles) is limited in the literature, and their stability is not comprehensively studied. In this work, we present the PV response of n-CdS / p-CdTe PVs under accelerated neutron irradiation. We measure PV properties of the devices at different neutron/photon doses. The equivalent dose deposited in the CdTe samples is simulated with deterministic and Monte Carlo radiation transport methods.
Thin-film CdTe solar cells were synthesized on a fluorine-doped tin oxide (FTO) coated glass substrate (≈ 4 cm × 4 cm). CdS:O (≈ 100 nm) was reactively RF sputtered in an oxygen/argon ambient followed by a close-spaced sublimation deposition of CdTe (≈ 3.5 μm) in an oxygen/helium ambient. The sample was exposed to a 10 min vapor CdCl2 in oxygen/helium ambient at 430˚C. The samples were exposed to a wet CuCl2 solution prior to anneal 200ºC. A gold back-contact was formed on CdTe via thermal evaporation. The final sample contains 16 CdTe devices. For neutron irradiation, we cleaved the CdTe substrate into four samples and exposed two samples to ≈ 90 kW reactor power neutron radiation for 5.5 hours and 8.2 hours, respectively, in our TRIGA (Training, Research, Isotopes, General Atomics) reactor.
We observed a noticeable color change of the glass substrates to brown after the neutron/gamma reactor exposure. Presumably, the injected high-energy neutrons caused the breaking of chemical bonds and the displacement of atoms in the glass substrates, creating point defects and color centers. The I-V characteristics showed noticeable deterioration with over 8 hour radiations. Specifically, the saturation current of the control devices was ≈ 25 nA increasing to 1 μA and 10 μA for the 5.5-hour and 8.2-hour radiated samples, respectively. The turn-on voltage of the control devices (≈ 0.85 V) decreased with the irradiated sample (≈ 0.75 V for 5.5-hour and ≈ 0.5 V for 8.2-hour exposures), implying noticeable radiation damage occurred at the heterojunction. The higher values of the ideality factor for irradiated devices (n > 2.2) compared to that of the control devices (n ≈ 1.3) also support the deterioration of the p-n junction. We observed the notable decrease in shunt resistance (RSH) and the increase in series resistance (Rs) with the neutron dose. It is possible that Cu ions introduced during the CuCl2 treatment may migrate into CdTe grain boundaries (GBs). The presence of Cu ions at GBs can create additional leakage paths for photocarrier transport, deteriorating the overall PV performance.
We estimated the radiation dose of CdTe in comparison to Si (conventional PV) using a UUTR model (e.g., MCNP6 2D UTR Reactor simulations). In this model, we simulated Si and CdTe at the center point of the triangular fuel lattice and used an “unperturbed flux” tally in the water. Our simulations yielded a dose rate of 6916 Gy/s of neutrons and 16 Gy/s of photons for CdTe, and 1 Gy/s of neutrons and 21 Gy/s of photons for Si (doses +/- <1%). The large dose rate of neutrons in CdTe is mainly attributed to the large thermal neutron absorption cross-section of 113Cd. Based on this estimation, we calculate that the exposure of our CdTe PVs is equivalent to several million years in LEO (Low-Earth Orbit), or about 10,000 years for Si in LEO. Currently, we are working on a low-dose neutron/photon radiation on CdTe PVs and their light I-Vs and microstructural characterizations to gain better understanding on the degradation of CdTe PVs.
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Effect of Helium on Dispersoid Evolution under Self-Ion Irradiation in A Dual-Phase 12Cr Oxide-Dispersion-Strengthened Alloy
As one candidate alloy for future Generation IV and fusion reactors, a dual-phase 12Cr oxide-dispersion-strengthened (ODS) alloy was developed for high temperature strength and creep resistance and has shown good void swelling resistance under high damage self-ion irradiation at high temperature. However, the effect of helium and its combination with radiation damage on oxide dispersoid stability needs to be investigated. In this study, 120 keV energy helium was preloaded into specimens at doses of 1 × 1015 and 1 × 1016 ions/cm2 at room temperature, and 3.5 MeV Fe self-ions were sequentially implanted to reach 100 peak displacement-per-atom at 475 °C. He implantation alone in the control sample did not affect the dispersoid morphology. After Fe ion irradiation, a dramatic increase in density of coherent oxide dispersoids was observed at low He dose, but no such increase was observed at high He dose. The study suggests that helium bubbles act as sinks for nucleation of coherent oxide dispersoids, but dispersoid growth may become difficult if too many sinks are introduced, suggesting that a critical mass of trapping is required for stable dispersoid growth.
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- Award ID(s):
- 1708788
- NSF-PAR ID:
- 10167832
- Date Published:
- Journal Name:
- Materials
- Volume:
- 12
- Issue:
- 20
- ISSN:
- 1996-1944
- Page Range / eLocation ID:
- 3343
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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We present a review of the published experimental and simulation radiation damage results in Ga 2 O 3 . All of the polytypes of Ga 2 O 3 are expected to show similar radiation resistance as GaN and SiC, considering their average bond strengths. However, this is not enough to explain the orders of magnitude difference of the relative resistance to radiation damage of these materials compared to GaAs and dynamic annealing of defects is much more effective in Ga 2 O 3 . It is important to examine the effect of all types of radiation, given that Ga 2 O 3 devices will potentially be deployed both in space and terrestrial applications. Octahedral gallium monovacancies are the main defects produced under most radiation conditions because of the larger cross-section for interaction compared to oxygen vacancies. Proton irradiation introduces two main paramagnetic defects in Ga 2 O 3 , which are stable at room temperature. Charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum due to gallium interstitials (Ga i ), vacancies (V Ga ), and antisites (Ga O ). One of the most important parameters to establish is the carrier removal rate for each type of radiation, since this directly impacts the current in devices such as transistors or rectifiers. When compared to the displacement damage predicted by the Stopping and Range of Ions in Matter(SRIM) code, the carrier removal rates are generally much lower and take into account the electrical nature of the defects created. With few experimental or simulation studies on single event effects (SEE) in Ga 2 O 3 , it is apparent that while other wide bandgap semiconductors like SiC and GaN are robust against displacement damage and total ionizing dose, they display significant vulnerability to single event effects at high Linear Energy Transfer (LET) and at much lower biases than expected. We have analyzed the transient response of β -Ga 2 O 3 rectifiers to heavy-ion strikes via TCAD simulations. Using field metal rings improves the breakdown voltage and biasing those rings can help control the breakdown voltage. Such biased rings help in the removal of the charge deposited by the ion strike.more » « less
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Abstract We present a new three-dimensional, MHD-plasma/kinetic-neutrals model of the solar wind (SW) interaction with the local interstellar medium (LISM), which self-consistently includes neutral hydrogen and helium atoms. This new model also treats electrons as a separate fluid and includes the effect of Coulomb collisions. While the properties of electrons in the distant SW and in the LISM are mostly unknown due to the lack of in situ observations, a common assumption for any global, single-ion model is to assume that electrons have the temperature of the ion mixture, which includes pickup ions. In the new model, electrons in the SW are colder, which results in a better agreement with New Horizons observations in the supersonic SW. In the LISM, however, ions and electrons are almost in thermal equilibrium. As for the plasma mixture, the major differences between the models are in the inner heliosheath, where the new model predicts a charge-exchange-driven cooling and a decrease of the heliosheath thickness. The filtration of interstellar neutral atoms at the heliospheric interface is discussed. The new model predicts an increase in the H density by ∼2% at 1 au. However, the fraction of pristine H atoms decreases by ∼12%, while the density of atoms born in the outer and inner heliosheath increases by 5% and ∼35%, respectively. While at 1 au the density of He atoms remains unchanged, the contribution from the “warm breeze” increases by ∼3%.
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/ma12203343
