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Recent work has demonstrated a low-temperature route to fabricating mixed ionic/electronic conducting (MIEC) thin films with enhanced oxygen exchange kinetics by crystallizing amorphous-grown thin films under mild temperatures, eluding conditions for deleterious A-site cation surface segregation. Yet, the complex, multiscale chemical and structural changes during MIEC crystallization and their implications for the electrical properties remain relatively unexplored. In this work, micro-structural and atomic-scale structural and chemical changes in crystallizing SrTi 0.65 Fe 0.35 O 3− δ thin films on insulating (0001)-oriented Al 2 O 3 substrates are observed and correlated to changes in the in-plane electrical conductivity, measured in situ by ac impedance spectroscopy. Synchrotron X-ray absorption spectroscopy at the Fe and Ti K-edges gives direct evidence of oxidation occurring with the onset of crystallization and insight into the atomic-scale structural changes driven by the chemical changes. The observed oxidation, increase in B-site polyhedra symmetry, and alignment of neighboring B-site cation coordination units demonstrate increases in both hole concentration and mobility, thus underpinning the measured increase of in-plane conductivity by over two orders of magnitude during crystallization. High resolution transmission electron microscopy and spectroscopy of films at various degrees of crystallinity reveal compositional uniformity with extensive nano-porosity in the crystallized films, consistent with solid phase contraction expected from both oxidation and crystallization. We suggest that this chemo-mechanically driven dynamic nano-structuring is an additional contributor to the observed electrical behavior. By the point that the films become ∼60% crystalline (according to X-ray diffraction), the conductivity reaches the value of dense, fully crystalline films. Given the resulting high electronic conductivity, this low-temperature processing route leading to semi-crystalline hierarchical films exhibits promise for developing high performance MIECs for low-to-intermediate temperature applications.
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Synthesis and Characterization of SrFe x Mn 1–x (O,F) 3−δ Oxide (δ = 0 and 0.5) and Oxyfluoride Perovskite Films
We report the synthesis and characterization of as-grown SrFexMn1-xO2.5 epitaxial films, which were also subjected to post-growth oxidation and topotactic fluorination to obtain SrFexMn1-xO3 and SrFexMn1-xO(2.5-d)Fg films. We show how both the B-site cation and anion composition influence the structural, electronic, and optical properties of this family of perovskite materials. The Fe substitution of Mn in SrMnO2.5 gradually expands the c-axis parameter, as indicated by X-ray diffraction. With increasing x, the F content incorporated under identical fluorination conditions increases, reaching its maximum in SrFeO(2.5-d)Fg. In the compounds with mixed B-site occupation, the Fe 2p photoemission peaks are shifted upon fluorination while the Mn 2p peaks are not, suggesting inductive effects lead to asymmetric responses in how F alters the Mn and Fe bonds. Electronic transport measurements reveal all compounds are insulators, with the exception of SrFeO3, and demonstrate that fluorination increases resistivity for all values of x. Optical absorption spectra in the SrFexMn1-xO2.5 and SrFexMn1-xO3 films evolve systematically as a function of x, consistent with a physical scenario in which optical changes with Fe substitution arise from a linear combination of Mn and Fe 3d bands within the electronic structure. In contrast, the F incorporation induces non-linear changes to the optical response, suggesting a more complex impact on the electronic structure in materials with concurrent B-site and anion site substitution.
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- Award ID(s):
- 1562223
- PAR ID:
- 10168741
- Date Published:
- Journal Name:
- Inorganic Chemistry
- ISSN:
- 0020-1669
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1021/acs.inorgchem.0c01148
