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1. Converse magneto-electric effects in a core–shell multiferroic nanofiber by electric field tuning of ferromagnetic resonance

   https://doi.org/10.1038/s41598-020-77041-x  

   Liu, Ying ; Sreenivasulu, G. ; Zhou, P. ; Fu, J. ; Filippov, D. ; Zhang, W. ; Zhou, T. ; Zhang, T. ; Shah, Piyush ; Page, M. R. ; et al ( November 2020 , Scientific Reports)

   This report is on studies directed at the nature of magneto-electric (ME) coupling by ferromagnetic resonance (FMR) under an electric field in a coaxial nanofiber of nickel ferrite (NFO) and lead zirconate titanate (PZT). Fibers with ferrite cores and PZT shells were prepared by electrospinning. The core–shell structure of annealed fibers was confirmed by electron- and scanning probe microscopy. For studies on converse ME effects, i.e., the magnetic response of the fibers to an applied electric field, FMR measurements were done on a single fiber with a near-field scanning microwave microscope (NSMM) at 5–10 GHz by obtaining profiles of bothmore »amplitude and phase of the complex scattering parameterS₁₁as a function of bias magnetic field. The strength of the voltage-ME couplingA_vwas determined from the shift in the resonance fieldH_rfor bias voltage ofV = 0–7 V applied to the fiber. The coefficientA_vfor the NFO core/PZT shell structure was estimated to be − 1.92 kA/Vm (− 24 Oe/V). A model was developed for the converse ME effects in the fibers and the theoretical estimates are in good agreement with the data.

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2. Magnetoelectric Versus Inductive Power Delivery for Sub-mm Receivers

   https://doi.org/10.1109/WPTC51349.2021.9458201  

   Khalifa, Adam ; Nasrollahpour, Mehdi ; Sun, Neville ; Zaeimbashi, Mohsen ; Chen, Huaihao ; Liang, Xianfeng ; Alemohammad, Milad ; Etienne-Cummings, Ralph ; Sun, Nian X. ; Cash, Sydney ( January 2021 , 2021 IEEE MTT-S Wireless Power Transfer Conference (WPTC 2021))

   Most of the next-generation implantable medical devices that are targeting sub-mm scale form factors are entirely powered wirelessly. The most commonly used form of wireless power transfer for ultra-small receivers is inductive coupling and has been so for many decades. This might change with the advent of novel microfabricated magnetoelectric (ME) antennas which are showing great potential as high-frequency wireless powered receivers. In this paper, we compare these two wireless power delivery methods using receivers that operate at 2.52 GHz with a surface area of 0.043 mm2 . Measurement results show that the maximum achievable power transfer of a MEmore »antenna outperforms that of an on-silicon coil by approximately 7 times for a Tx-Rx distance of 2.16 and 3.3 times for a Tx-Rx distance of 0.76 cm.« less
3. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments andmore »modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
4. Design and synthesis of two-dimensional covalent organic frameworks with four-arm cores: prediction of remarkable ambipolar charge-transport properties

   https://doi.org/10.1039/C9MH00035F  

   Thomas, Simil ; Li, Hong ; Dasari, Raghunath R. ; Evans, Austin M. ; Castano, Ioannina ; Allen, Taylor G. ; Reid, Obadiah G. ; Rumbles, Garry ; Dichtel, William R. ; Gianneschi, Nathan C. ; et al ( January 2019 , Materials Horizons)

   We have considered three two-dimensional (2D) π-conjugated polymer network ( i.e. , covalent organic frameworks, COFs) materials based on pyrene, porphyrin, and zinc-porphyrin cores connected via diacetylenic linkers. Their electronic structures, investigated at the density functional theory global-hybrid level, are indicative of valence and conduction bands that have large widths, ranging between 1 and 2 eV. Using a molecular approach to derive the electronic couplings between adjacent core units and the electron-vibration couplings, the three π-conjugated 2D COFs are predicted to have ambipolar charge-transport characteristics with electron and hole mobilities in the range of 65–95 cm 2 V −1 smore »−1 . Such predicted values rank these 2D COFs among the highest-mobility organic semiconductors. In addition, we have synthesized the zinc-porphyrin based 2D COF and carried out structural characterization via powder X-ray diffraction, high-resolution transmission electron microscopy, and surface area analysis, which demonstrates the feasibility of these electroactive networks. Steady-state and flash-photolysis time-resolved microwave conductivity measurements on the zinc-porphyrin COF point to appreciable, broadband photoconductivity while transmission spectral measurements are indicative of extended π-conjugation.« less
5. Designing iridate-based superlattice with large magnetoelectric coupling

   https://doi.org/10.1039/C9TC04466C  

   Dasa, Tamene R. ; Hao, Lin ; Liu, Jian ; Xu, Haixuan ( October 2019 , Journal of Materials Chemistry C)

   The coupling between ferroelectric and magnetic order provides a powerful means to control magnetic properties with electric fields. In this study, we have investigated the magnetoelectric (ME) coupling in iridate-oxide based superlattices employing first-principles density functional theory (DFT) calculations. In particular, we have investigated several oxide superlattices, including (SrIrO 3 ) 1 –(CaTiO 3 ) 1 (SIO–CTO) and (SrIrO 3 ) 1 –(BaTiO 3 ) 1 (SIO–BTO), with an alternating single layer of SIO and CTO/BTO. We identify a very large ME coupling in SIO–BTO mediated by both lattice and electronic contributions. In comparison, moderate ME coupling constants are foundmore »in SIO–CTO. Further electronic and structural analyses reveal that the large ME coupling of SIO–BTO is caused by the large spin–orbit coupling of 5d iridium as well as the significant polarization induced in the SIO–BTO. Interestingly, we find that the ME coupling in SIO–BTO can further be enhanced by modulating epitaxial strain. These results suggest a route to significantly enhance the ME coupling effects, which might be applicable for other materials and practical applications.« less