Background: An induced loss of balance resulting from a postural perturbation has been reported as the primary source for postural instability leading to falls. Hence; early detection of postural instability with novel wearable sensor-based measures may aid in reducing falls and fall-related injuries. The purpose of the study was to validate the use of a stretchable soft robotic sensor (SRS) to detect ankle joint kinematics during both unexpected and expected slip and trip perturbations. Methods: Ten participants (age: 23.7 ± 3.13 years; height: 170.47 ± 8.21 cm; mass: 82.86 ± 23.4 kg) experienced a counterbalanced exposure of an unexpected slip, an unexpected trip, an expected slip, and an expected trip using treadmill perturbations. Ankle joint kinematics for dorsiflexion and plantarflexion were quantified using three-dimensional (3D) motion capture through changes in ankle joint range of motion and using the SRS through changes in capacitance when stretched due to ankle movements during the perturbations. Results: A greater R-squared and lower root mean square error in the linear regression model was observed in comparing ankle joint kinematics data from motion capture with stretch sensors. Conclusions: Results from the study demonstrated that 71.25% of the trials exhibited a minimal error of less than 4.0 degrees difference from the motion capture system and a greater than 0.60 R-squared value in the linear model; suggesting a moderate to high accuracy and minimal errors in comparing SRS to a motion capture system. Findings indicate that the stretch sensors could be a feasible option in detecting ankle joint kinematics during slips and trips.
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Closing the Wearable Gap—Part V: Development of a Pressure-Sensitive Sock Utilizing Soft Sensors
The purpose of this study was to evaluate the use of compressible soft robotic sensors (C-SRS) in determining plantar pressure to infer vertical and shear forces in wearable technology: A ground reaction pressure sock (GRPS). To assess pressure relationships between C-SRS, pressure cells on a BodiTrakTM Vector Plate, and KistlerTM Force Plates, thirteen volunteers performed three repetitions of three different movements: squats, shifting center-of-pressure right to left foot, and shifting toes to heels with C-SRS in both anterior–posterior (A/P) and medial–lateral (M/L) sensor orientations. Pearson correlation coefficient of C-SRS to BodiTrakTM Vector Plate resulted in an average R-value greater than 0.70 in 618/780 (79%) of sensor to cell comparisons. An average R-value greater than 0.90 was seen in C-SRS comparison to KistlerTM Force Plates during shifting right to left. An autoregressive integrated moving average (ARIMA) was conducted to identify and estimate future C-SRS data. No significant differences were seen in sensor orientation. Sensors in the A/P orientation reported a mean R2 value of 0.952 and 0.945 in the M/L sensor orientation, reducing the effectiveness to infer shear forces. Given the high R values, the use of C-SRSs to infer normal pressures appears to make the development of the GRPS feasible.
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- Award ID(s):
- 1827652
- NSF-PAR ID:
- 10181320
- Date Published:
- Journal Name:
- Sensors
- Volume:
- 20
- Issue:
- 1
- ISSN:
- 1424-8220
- Page Range / eLocation ID:
- 208
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). 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From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. 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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).more » « less
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Abstract We present a novel method for measuring the fluctuating basal normal and shear stresses of debris flows by using along‐channel seismic recordings. Our method couples a simple parameterization of a debris flow as a seismic source with direct measurements of seismic path effects using empirical Green's functions generated with a force hammer. We test this method using two large‐scale (8 and 10 m3) experimental flows at the U.S. Geological Survey debris‐flow flume that were recorded by dozens of three‐component seismic sensors. The seismically derived basal stress fluctuations compare well in amplitude and timing to independent force plate measurements within the valid frequency range (15–50 Hz). We show that although the high‐frequency seismic signals provide band‐limited forcing information, there are systematic relations between the fluctuating stresses and independently measured flow properties, especially mean basal shear stress and flow thickness. However, none of the relationships are simple, and since the flow properties also correlate with one another, we cannot isolate a single factor that relates in a simple way to the fluctuating forces. Nevertheless, our observations, most notably the gradually declining ratio of fluctuating to mean basal stresses during flow passage and the distinctive behavior of the coarse, unsaturated flow front, imply that flow style may be a primary control on the conversion of translational to vibrational kinetic energy. This conversion ultimately controls the radiation of high‐frequency seismic waves. Thus, flow style may provide the key to revealing the nature of the relationship between fluctuating forces and other flow properties.
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/s20010208
