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1. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi Teja ; Jain, Barsha ; Velpula, Swetha ; Nguyen, Hoang-Duy ; Nguyen, Hieu Pham Trung ( September 2020 , Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by$\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by$\sim <\#comment/>11$times, and enhances optical power by$\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of$\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is$\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is$\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is$\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at$\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters.

    

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2. Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

   https://doi.org/10.1364/AO.394149  

   Velpula, Ravi Teja ; Jain, Barsha ; Bui, Ha Quoc Thang ; Shakiba, Fatemeh Mohammadi ; Jude, Jeffrey ; Tumuna, Moses ; Nguyen, Hoang-Duy ; Lenka, Trupti Ranjan ; Nguyen, Hieu Pham Trung ( June 2020 , Applied Optics)

   This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at$\sim <\#comment/>270\mathrm{n}\mathrm{m}$. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the$p\text{-}\mathrm{G}\mathrm{a}\mathrm{N}$region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional$p\text{-}\mathrm{t}\mathrm{y}\mathrm{p}\mathrm{e}$EBL-based LED structure.

    

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3. Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes

   https://doi.org/10.1364/AO.418603  

   Jain, Barsha ; Velpula, Ravi Teja ; Patel, Moulik ; Nguyen, Hieu Pham Trung ( April 2021 , Applied Optics)

   Electron overflow from the active region confines the AlGaN deep-ultraviolet (UV) light-emitting diode (LED) performance. This paper proposes a novel approach to mitigate the electron leakage problem in AlGaN deep-UV LEDs using concave quantum barrier (QB) structures. The proposed QBs suppress the electron leakage by significantly reducing the electron mean free path that improves the electron capturing capability in the active region. Overall, such an engineered structure also enhances the hole injection into the active region, thereby enhancing the radiative recombination in the quantum wells. As a result, our study shows that the proposed structure exhibits an optical power of 9.16 mW at$\sim <\#comment/>284\mathrm{n}\mathrm{m}$wavelength, which is boosted by$\sim <\#comment/>40.5\mathrm{\%<\#comment/>}$compared to conventional AlGaN UV LED operating at 60 mA injection current.

    

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4. Wake dynamics of air filaments generated by high-energy picosecond laser pulses at 1 kHz repetition rate

   https://doi.org/10.1364/OL.439232  

   Higginson, A. ; Wang, Y. ; Chi, H. ; Goffin, A. ; Larkin, I. ; Milchberg, H. M. ; Rocca, J. J. ( October 2021 , Optics Letters)

   We investigated the filamentation in air of 7 ps laser pulses of up to 200 mJ energy from a 1.03 μm-wavelength Yb:YAG laser at repetition rates up to$f=1\mathrm{k}\mathrm{H}\mathrm{z}$. Interferograms of the wake generated show that while pulses in a train of repetition rate$f=0.1\mathrm{k}\mathrm{H}\mathrm{z}$encounter a nearly unperturbed environment, at$f=1\mathrm{k}\mathrm{H}\mathrm{z}$, a channel with an axial air density hole of$\sim <\#comment/>20\mathrm{\%<\#comment/>}$is generated and maintained at all times by the cumulative effect of preceding laser pulses. Measurements at$f=1\mathrm{k}\mathrm{H}\mathrm{z}$show that the energy deposited decreases proportional to the air channel density depletion, becoming more pronounced as the repetition rate and pulse energy increase. Numerical simulations indicate that contrary to filaments generated by shorter duration pulses, the electron avalanche is the dominant energy loss mechanism during filamentation with 7 ps pulses. The results are of interest for the atmospheric propagation of joule-level picosecond pulses from Yb:YAG lasers, of which average powers now surpass 1 kW, and for channeling other directed energy beams.

    

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5. Utilizing phase delays of an integrated pixel-array structure to generate orbital-angular-momentum beams with tunable orders and a broad bandwidth

   https://doi.org/10.1364/OL.396447  

   Song, Hao ; Zhao, Zhe ; Zhang, Runzhou ; Song, Haoqian ; Zhou, Huibin ; Pang, Kai ; Du, Jing ; Li, Long ; Liu, Cong ; Su, Xinzhou ; et al ( July 2020 , Optics Letters)

   We study the relationship between the input phase delays and the output mode orders when using a pixel-array structure fed by multiple single-mode waveguides for tunable orbital-angular-momentum (OAM) beam generation. As an emitter of a free-space OAM beam, the designed structure introduces a transformation function that shapes and coherently combines multiple (e.g., four) equal-amplitude inputs, with the$k$th input carrying a phase delay of$(k-<\#comment/>1)\mathrm{\Delta <\#comment/>}\mathrm{\phi <\#comment/>}$. The simulation results show that (1) the generated OAM order ℓ is dependent on the relative phase delay$\mathrm{\Delta <\#comment/>}\mathrm{\phi <\#comment/>}$; (2) the transformation function can be tailored by engineering the structure to support different tunable ranges (e.g., $l=\{-<\#comment/>1\},\{-<\#comment/>1,+1\},\{-<\#comment/>1,0,+1\}$, or$\{-<\#comment/>2,-<\#comment/>1,+1,+2\}$); and (3) multiple independent coaxial OAM beams can be generated by simultaneously feeding the structure with multiple independent beams, such that each beam has its own$\mathrm{\Delta <\#comment/>}\mathrm{\phi <\#comment/>}$value for the four inputs. Moreover, there is a trade-off between the tunable range and the mode purity, bandwidth, and crosstalk, such that the increase of the tunable range leads to (a) decreased mode purity (from 91% to 75% for$l=-<\#comment/>1$), (b) decreased 3 dB bandwidth of emission efficiency (from 285 nm for$l=\{-<\#comment/>1\}$to 122 nm for$l=\{-<\#comment/>2,-<\#comment/>1,+1,+2\}$), and (c) increased crosstalk within the C-band (from$-<\#comment/>23.7$to$-<\#comment/>13.2\mathrm{d}\mathrm{B}$when the tunable range increases from 2 to 4).

    

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