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1. MCMC inversion of the transient and steady-state creep flow law parameters of dunite under dry and wet conditions

   https://doi.org/10.1186/s40623-021-01543-9  

   Masuti, Sagar ; Barbot, Sylvain ( December 2021 , Earth, Planets and Space)

   Abstract The rheology of the upper mantle impacts a variety of geodynamic processes, including postseismic deformation following great earthquakes and post-glacial rebound. The deformation of upper mantle rocks is controlled by the rheology of olivine, the most abundant upper mantle mineral. The mechanical properties of olivine at steady state are well constrained. However, the physical mechanism underlying transient creep, an evolutionary, hardening phase converging to steady state asymptotically, is still poorly understood. Here, we constrain a constitutive framework that captures transient creep and steady state creep consistently using the mechanical data from laboratory experiments on natural dunites containing at least 94% olivine under both hydrous and anhydrous conditions. The constitutive framework represents a Burgers assembly with a thermally activated nonlinear stress-versus-strain-rate relationship for the dashpots. Work hardening is obtained by the evolution of a state variable that represents internal stress. We determine the flow law parameters for dunites using a Markov chain Monte Carlo method. We find the activation energy $$430\pm 20$$ 430 ± 20   and $$250\pm 10$$ 250 ± 10  kJ/mol for dry and wet conditions, respectively, and the stress exponent $$2.0\pm 0.1$$ 2.0 ± 0.1 for both the dry and wet cases for transient creep, consistently lowermore »than those of steady-state creep, suggesting a separate physical mechanism. For wet dunites in the grain-boundary sliding regime, the grain-size dependence is similar for transient creep and steady-state creep. The lower activation energy of transient creep could be due to a higher jog density of the corresponding soft-slip system. More experimental data are required to estimate the activation volume and water content exponent of transient creep. The constitutive relation used and its associated flow law parameters provide useful constraints for geodynamics applications. Graphical Abstract« less
2. The Effect of Temperature on the Strain-Induced Austenite to Martensite Transformation in SS 316L During Uniaxial Tension

   https://doi.org/10.1007/978-3-030-75381-8_155  

   Mamros E.M., Bram Kuijer ( July 2021 , Forming the Future. The Minerals, Metals & Materials Series)

   Daehn G., Cao J. (Ed.)

   Controlling the microstructure of components is of interest to achieve optimal final part properties, i.e., materials by design. The manufacturing process itself can affect a material’s characteristics by changing the microstructure. For example, past research has shown that austenite to martensite phase transformation in stainless steel occurs during deformation. Temperature is known to have a significant influence on this phenomenon. In this paper, the effect of temperature on the austenitic to martensite phase transformation in SS 316L under uniaxial tension is investigated. Both a cooling system and a heat exchanger were employed in a uniaxial tension experimental setup to control the temperature. Tensile specimens were strained to fracture at four temperatures of −15, 0, 10, and 20 °C. Digital imaging correlation (DIC) and a thermal imaging camera were used for tests at 0 °C and above to capture strain and temperature data, respectively. Strain and temperature data could not be obtained at −15 °C due to the DIC paint flaking during testing. X-ray diffraction was used to measure the volume fraction of martensite in both the as-received and the tensile-tested materials.
3. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
4. Linking titanite U–Pb dates to coupled deformation and dissolution–reprecipitation

   https://doi.org/10.1007/s00410-022-01906-9  

   Moser, Amy C. ; Hacker, Bradley R. ; Gehrels, George E. ; Seward, Gareth G. E. ; Kylander-Clark, Andrew R. C. ; Garber, Joshua M. ( March 2022 , Contributions to Mineralogy and Petrology)

   Titanite U–Pb geochronology is a promising tool to date high-temperature tectonic processes, but the extent to and mechanisms by which recrystallization resets titanite U–Pb dates are poorly understood. This study combines titanite U–Pb dates, trace elements, zoning, and microstructures to directly date deformation and fluid-driven recrystallization along the Coast shear zone (BC, Canada). Twenty titanite grains from a deformed calc-silicate gneiss yield U–Pb dates that range from ~ 75 to 50 Ma. Dates between ~ 75 and 60 Ma represent metamorphic crystallization or inherited detrital cores, whereas ~ 60 and 50 Ma dates reflect localized, grain-scale processes that variably recrystallized the titanite. All the analyzed titanite grains show evidence of fluid-mediated dissolution–reprecipitation, particularly at grain rims, but lack evidence of thermally mediated volume diffusion at a metamorphic temperature of > 700 °C. The younger U–Pb dates are predominantly found in bent portions of grains or fluid-recrystallized rims. These features likely formed during ductile slip and associated fluid flow along the Coast shear zone, although it is unclear whether the dates represent 10 Myr of continuous recrystallization or incomplete resetting of the titanite U–Pb system during a punctuated metamorphic event. Correlations between dates and trace-element concentrations vary, indicating that the effects of dissolution–reprecipitation decoupled U–Pb dates from trace-element concentrations in somemore »grains. These results demonstrate that U–Pb dates from bent titanite lattices and titanite subgrains may directly date crystal-plastic deformation, suggesting that deformation microstructures enhance fluid-mediated recrystallization, and emphasize the complexity of fluid and deformation processes within and among individual grains.

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5. Supporting Simultaneous Air Revitalization and Thermal Control in a Crewed Habitat With Temperate Chlorella vulgaris and Eurythermic Antarctic Chlorophyta

   https://doi.org/10.3389/fmicb.2021.709746  

   Matula, Emily E. ; Nabity, James A. ; McKnight, Diane M. ( August 2021 , Frontiers in Microbiology)

   Including a multifunctional, bioregenerative algal photobioreactor for simultaneous air revitalization and thermal control may aid in carbon loop closure for long-duration surface habitats. However, using water-based algal media as a cabin heat sink may expose the contained culture to a dynamic, low temperature environment. Including psychrotolerant microalgae, native to these temperature regimes, in the photobioreactor may contribute to system stability. This paper assesses the impact of a cycled temperature environment, reflective of spacecraft thermal loops, to the oxygen provision capability of temperate Chlorella vulgaris and eurythermic Antarctic Chlorophyta. The tested 28-min temperature cycles reflected the internal thermal control loops of the International Space Station ( C . vulgaris , 9–27°C; Chlorophyta-Ant, 4–14°C) and included a constant temperature control (10°C). Both sample types of the cycled temperature condition concluded with increased oxygen production rates ( C . vulgaris ; initial: 0.013 mgO 2 L –1 , final: 3.15 mgO 2 L –1 and Chlorophyta-Ant; initial: 0.653 mgO 2 L –1 , final: 1.03 mgO 2 L –1 ) and culture growth, suggesting environmental acclimation. Antarctic sample conditions exhibited increases or sustainment of oxygen production rates normalized by biomass dry weight, while both C . vulgaris sample conditions decreased oxygen production permore »biomass. However, even with the temperature-induced reduction, cycled temperature C . vulgaris had a significantly higher normalized oxygen production rate than Antarctic Chlorophyta. Chlorophyll fluorometry measurements showed that the cycled temperature conditions did not overly stress both sample types (F V /F M : 0.6–0.75), but the Antarctic Chlorophyta sample had significantly higher fluorometry readings than its C . vulgaris counterpart ( F = 6.26, P < 0.05). The steady state C . vulgaris condition had significantly lower fluorometry readings than all other conditions (F V /F M : 0.34), suggesting a stressed culture. This study compares the results to similar experiments conducted in steady state or diurnally cycled temperature conditions. Recommendations for surface system implementation are based off the presented results. The preliminary findings imply that both C . vulgaris and Antarctic Chlorophyta can withstand the dynamic temperature environment reflective of a thermal control loop and these data can be used for future design models.« less