Reddy, Pramod, Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M Hayden, Sarkar, Biplab, Pavlidis, Spyridon, Collazo, Ramón, Sitar, Zlatko, and Kohn, Erhard. Role of polarity in SiN on Al/GaN and the pathway to stable contacts. Retrieved from https://par.nsf.gov/biblio/10183337. Semiconductor Science and Technology 35.5 Web. doi:10.1088/1361-6641/ab7775.

Reddy, Pramod, Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M Hayden, Sarkar, Biplab, Pavlidis, Spyridon, Collazo, Ramón, Sitar, Zlatko, & Kohn, Erhard. Role of polarity in SiN on Al/GaN and the pathway to stable contacts. Semiconductor Science and Technology, 35 (5). Retrieved from https://par.nsf.gov/biblio/10183337. https://doi.org/10.1088/1361-6641/ab7775

Reddy, Pramod, Khachariya, Dolar, Szymanski, Dennis, Breckenridge, M Hayden, Sarkar, Biplab, Pavlidis, Spyridon, Collazo, Ramón, Sitar, Zlatko, and Kohn, Erhard. "Role of polarity in SiN on Al/GaN and the pathway to stable contacts". Semiconductor Science and Technology 35 (5). Country unknown/Code not available. https://doi.org/10.1088/1361-6641/ab7775. https://par.nsf.gov/biblio/10183337.

@article{osti_10183337,
place = {Country unknown/Code not available}, title = {Role of polarity in SiN on Al/GaN and the pathway to stable contacts}, url = {https://par.nsf.gov/biblio/10183337}, DOI = {10.1088/1361-6641/ab7775}, abstractNote = {}, journal = {Semiconductor Science and Technology}, volume = {35}, number = {5}, author = {Reddy, Pramod and Khachariya, Dolar and Szymanski, Dennis and Breckenridge, M Hayden and Sarkar, Biplab and Pavlidis, Spyridon and Collazo, Ramón and Sitar, Zlatko and Kohn, Erhard}, }