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1. Tuning In-Plane Magnetic Anisotropy and Interfacial Exchange Coupling in Epitaxial La _2/3 Sr _1/3 CoO ₃ /La _2/3 Sr _1/3 MnO ₃ Heterostructures

   https://doi.org/10.1021/acsami.3c10376  

   Feng, Mingzhen; Ahlm, Nolan; Sasaki, Dayne Y.; Chiu, I-Ting; N’Diaye, Alpha T.; Shafer, Padraic; Klewe, Christoph; Mehta, Apurva; Takamura, Yayoi (November 2023, ACS Applied Materials & Interfaces)
2. In ₂ Se ₃ , In ₂ Te ₃ , and In ₂ (Se,Te) ₃ Alloys as Photovoltaic Materials

   https://doi.org/10.1021/acs.jpclett.2c02975  

   Li, Wei; Cai, Xue-Fen; Valdes, Nicholas; Wang, Tianshi; Shafarman, William; Wei, Su-Huai; Janotti, Anderson (December 2022, The Journal of Physical Chemistry Letters)
3. Growth mode and strain effect on relaxor ferroelectric domains in epitaxial 0.67Pb(Mg _1/3 Nb _2/3 )O ₃ –0.33PbTiO ₃ /SrRuO ₃ heterostructures

   https://doi.org/10.1039/D0RA10107A  

   Belhadi, Jamal; Gabor, Urška; Uršič, Hana; Daneu, Nina; Kim, Jieun; Tian, Zishen; Koster, Gertjan; Martin, Lane W.; Spreitzer, Matjaž (January 2021, RSC Advances)

   null (Ed.)

   Controlling the growth of complex relaxor ferroelectric thin films and understanding the relationship between biaxial strain–structural domain characteristics are desirable for designing materials with a high electromechanical response. For this purpose, epitaxial thin films free of extended defects and secondary phases are urgently needed. Here, we used optimized growth parameters and target compositions to obtain epitaxial (40–45 nm) 0.67Pb(Mg 1/3 Nb 2/3 )O 3 –0.33PbTiO 3 /(20 nm) SrRuO 3 (PMN–33PT/SRO) heterostructures using pulsed-laser deposition (PLD) on singly terminated SrTiO 3 (STO) and ReScO 3 (RSO) substrates with Re = Dy, Tb, Gd, Sm, and Nd. In situ reflection high-energy electron diffraction (RHEED) and high-resolution X-ray diffraction (HR-XRD) analysis confirmed high-quality and single-phase thin films with smooth 2D surfaces. High-resolution scanning transmission electron microscopy (HR-STEM) revealed sharp interfaces and homogeneous strain further confirming the epitaxial cube-on-cube growth mode of the PMN–33PT/SRO heterostructures. The combined XRD reciprocal space maps (RSMs) and piezoresponse force microscopy (PFM) analysis revealed that the domain structure of the PMN–33PT heterostructures is sensitive to the applied compressive strain. From the RSM patterns, an evolution from a butterfly-shaped diffraction pattern for mildly strained PMN–33PT layers, which is evidence of stabilization of relaxor domains, to disc-shaped diffraction patterns for high compressive strains with a highly distorted tetragonal structure, is observed. The PFM amplitude and phase of the PMN–33PT thin films confirmed the relaxor-like for a strain state below ∼1.13%, while for higher compressive strain (∼1.9%) the irregularly shaped and poled ferroelectric domains were observed. Interestingly, the PFM phase hysteresis loops of the PMN–33PT heterostructures grown on the SSO substrates (strain state of ∼0.8%) exhibited an enhanced coercive field which is about two times larger than that of the thin films grown on GSO and NSO substrates. The obtained results show that epitaxial strain engineering could serve as an effective approach for tailoring and enhancing the functional properties in relaxor ferroelectrics. 

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4. Gradient chemical order in the relaxor Pb(Mg _1∕3 Nb _2∕3 )O ₃

   https://doi.org/10.1063/1.5016561  

   Cabral, Matthew J.; Zhang, Shujun; Dickey, Elizabeth C.; LeBeau, James M. (February 2018, Applied Physics Letters)
5. Low‐Voltage Magnetoelectric Coupling in Fe _0.5 Rh _0.5 /0.68PbMg _1/3 Nb _2/3 O ₃ ‐0.32PbTiO ₃ Thin‐Film Heterostructures

   https://doi.org/10.1002/adfm.202105068  

   Zhao, Wenbo; Kim, Jieun; Huang, Xiaoxi; Zhang, Lei; Pesquera, David; Velarde, Gabriel_A_P; Gosavi, Tanay; Lin, Chia‐Ching; Nikonov, Dmitri_E; Li, Hai; et al (July 2021, Advanced Functional Materials)

   Abstract The rapid development of computing applications demands novel low‐energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low‐voltage control of magnetism in 30 nm Fe_0.5Rh_0.5/100 nm 0.68PbMg_1/3Nb_2/3O₃‐0.32PbTiO₃(PMN‐PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain‐induced changes in the Fe_0.5Rh_0.5mediated by voltages applied to the PMN‐PT. We describe approaches to achieve high‐quality, epitaxial growth of Fe_0.5Rh_0.5on the PMN‐PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin‐film devices via studies of the anomalous Hall effect. By comparing the spin‐flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10⁻⁸ s m⁻¹at 325 K while applying a −0.75 V bias. 

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