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  • Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric
Title: Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric
Award ID(s):
1711322 1810116 1831954
PAR ID:
10188499
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Semiconductor Science and Technology
Volume:
34
Issue:
12
ISSN:
0268-1242
Page Range / eLocation ID:
125001
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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