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Award ID contains: 1810116

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  1. ; ; ; ; ; ; ; ; ; ( , Applied Physics Letters)
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  2. ; ; ; ; ; ; ( , Applied Physics Express)
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  3. ; ; ; ; ; ( , Applied Physics Letters)
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  4. ; ; ; ; ; ; ; ; ; ; et al ( , ECS Meeting Abstracts)
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  6. ; ; ; ; ; ; ; ; ; ( , Applied Physics Express)
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  8. ; ; ; ; ; ; ; ; ( , Applied Physics Express)
    We report an Ultrawide Bandgap Al0.4Ga0.6N channel Metal-Oxide-Semiconductor Heterostructure field effect transistor with drain currents exceeding 1.33 A/mm (pulse) and 1.17A/mm (DC), around 2-fold increase over reported for AlGaN HFETs. The increase was achieved by incorporating hybrid barrier layer consisting of an AlN spacer, n-doped Al0.6Ga0.4N barrier and a thin reverse graded AlxGa1-xN (x from 0.60 to 0.30) cap layer. To enhance current spreading, a "perforated" channel layout comprising of narrow channel sections separated by current blocking islands was used. A composite ALD deposited ZrO2/Al2O3 film was used as gate dielectric. A breakdown field above 2MV/cm was measured. 
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  9. ; ; ; ; ; ; ; ; ( , Journal of Electronic Materials)
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  10. ; ; ; ; ; ; ( , physica status solidi (a))
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