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Title: High‐Temperature Operation of Al x Ga 1−x N ( x  > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides
Authors:
; ; ; ; ; ; ; ; ; ;
Award ID(s):
1711322 1810116
Publication Date:
NSF-PAR ID:
10188509
Journal Name:
physica status solidi (a)
Volume:
217
Issue:
7
Page Range or eLocation-ID:
1900802
ISSN:
1862-6300
Sponsoring Org:
National Science Foundation
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