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Title: Effect of reactant dosing on selectivity during area-selective deposition of TiO 2 via integrated atomic layer deposition and atomic layer etching
Award ID(s):
1704151
NSF-PAR ID:
10191012
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
128
Issue:
10
ISSN:
0021-8979
Page Range / eLocation ID:
Article No. 105302
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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