An official website of the United States government
The sensitivity of gravitational-wave detectors is limited by the mechanical loss associated with the amorphous coatings of the detectors’ mirrors. Amorphous silicon has higher refraction index and lower mechanical loss than current high-index coatings, but its optical absorption at the wavelength used for the detectors is at present large. The addition of hydrogen to the amorphous silicon network reduces both optical absorption and mechanical loss for films prepared under a range of conditions at all measured wavelengths and temperatures, with a particularly large effect on films grown at room temperature. The uptake of hydrogen is greatest in the films grown at room temperature, but still below 1.5 at.% H, which show an ultralow optical absorption (below 10 ppm) measured at 2000 nm for 500-nm-thick films. These results show that hydrogenation is a promising strategy to reduce both optical absorption and mechanical loss in amorphous silicon, and may enable fabrication of mirror coatings for gravitational-wave detectors with improved sensitivity.
more »
« less
Two-level systems and growth-induced metastability in hydrogenated amorphous silicon
Abstract Specific heat measurements from 2 to 300 K of hydrogenated amorphous silicon prepared by hot-wire chemical vapor deposition show a large excess specific heat at low temperature, significantly larger than the Debye specific heat calculated from the measured sound velocity. The as-prepared films have a Schottky anomaly that is associated with metastable hydrogen in the amorphous network, as well as large linear and excess cubic term commonly associated with tunneling two-level systems in amorphous solids. Annealing at 200 °C, a temperature that enables hydrogen mobility but not evaporation, irreversibly reduces the heat capacity, eliminating the Schottky anomaly and leaving a reduced linear heat capacity. A non-monotonic dependence on growth temperature and H content is observed in all effects, except for sound velocity, which suggests that the tunneling two-level systems and the Schottky anomaly are associated with atomic hydrogen and require low density regions to form, while sound velocity is associated with the silicon network and increases with increasing growth temperature.
more »
« less
- Award ID(s):
- 1809498
- PAR ID:
- 10191276
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Materials Research Express
- Volume:
- 7
- Issue:
- 9
- ISSN:
- 2053-1591
- Page Range / eLocation ID:
- Article No. 095201
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
In this paper, we report the measurements of specific heat of an amorphous Ti9.5Si90.5 alloy located very close to the critical point of the metal-insulator transition. In the presence of a magnetic field, the specific heat is dominated by the Schottky anomaly caused by magnetic moments associated with the dangling bonds in the matrix of amorphous Si. Subtraction of this contribution exposes the behavior of the electronic specific heat coefficient γ . The coefficient is temperature independent above 2 K and is, in order of magnitude, close to the value expected in the absence of electron-electron interactions. In the temperature range 0.4–1.5 K, the coefficient γ shows an anomalous downturn, which can be approximated by the dependence γ (T ) = γ0 ln(T/T0 ), with T0 ≈ 0.2 K. In a companion paper, we found that the Hall coefficient in Ti-Si alloys is affected by the electron-electron interaction up to much higher temperature of 150 K and also varies critically across the metal-insulator transition. We compare our results with theoretical predictions for three models, which can potentially explain the anomalous behavior of the specific heat: generalized nonlinear σ model, Coulomb glass, and many-body localization.more » « less
-
Abstract Quantum two-level systems (TLSs) intrinsic to glasses induce decoherence in many modern quantum devices, such as superconducting qubits. Although the low-temperature physics of these TLSs is usually well-explained by a phenomenological standard tunneling model of independent TLSs, the nature of these TLSs, as well as their behavior out of equilibrium and at high energies above 1 K, remain inconclusive. Here we measure the non-equilibrium dielectric loss of TLSs in amorphous silicon using a superconducting resonator, where energies of TLSs are varied in time using a swept electric field. Our results show the existence of two distinct ensembles of TLSs, interacting weakly and strongly with phonons, where the latter also possesses anomalously large electric dipole moment. These results may shed new light on the low temperature characteristics of amorphous solids, and hold implications to experiments and applications in quantum devices using time-varying electric fields.more » « less
-
Hydrogenated amorphous silicon (a-Si:H) has drawn keen interest as a thin-film semiconductor and superb passivation layer in high-efficiency silicon solar cells due to its low cost, low processing temperature, high compatibility with substrates, and scalable manufacturing. Although the impact of hydrogenation on the structural, optical, and electronic properties of a-Si:H has been extensively studied, the underlying physics of its impact on the thermal properties is still unclear. Here, we synthesize a-Si:H films with well-controlled hydrogen concentrations using plasma-enhanced chemical vapor deposition and systematically study the thermal conductivity of these a-Si:H films using time-domain thermoreflectance. We find that the reduction of thermal conductivity of a-Si:H films is attributed to the suppression of diffuson and propagon contributions as the hydrogen concentration increases. At the maximum hydrogen concentration of 25.4 atomic percentage, the contributions from diffusons and propagons to the thermal conductivity are decreased by 40% (from 1.10 to 0.67 W m −1 K −1 ) and 64% (from 0.61 to 0.22 W m −1 K −1 ), respectively. Such a significant reduction in the thermal conductivity of a-Si:H originates from the hydrogen induced material softening, the decrease in density, and phonon-defect scattering. The results of this work provide fundamental insights into the thermal transport properties of a-Si:H thin films, which is beneficial for the design and optimization of amorphous silicon-based technologies including photovoltaics, large-area electronics, and thermoelectric devices.more » « less
-
ZrSe3 with a quasi-one-dimensional (quasi-1D) crystal structure belongs to the transition metal trichalcogenides (TMTCs) family. Owing to its unique optical, electrical, and optoelectrical properties, ZrSe3 is promising for applications in field effect transistors, photodetectors, and thermoelectrics. Compared with extensive studies of the above-mentioned physical properties, the thermal properties of ZrSe3 have not been experimentally investigated. Here, we report the crystal growth and thermal and optical properties of ZrSe3. Millimeter-sized single crystalline ZrSe3 flakes were prepared using a chemical vapor transport method. These flakes could be exfoliated into microribbons by liquid-phase exfoliation. The transmission electron microscope studies suggested that the obtained microribbons were single crystals along the chain axis. ZrSe3 exhibited a specific heat of 0.311 J g−1 K−1 at 300 K, close to the calculated value of the Dulong–Petit limit. The fitting of low-temperature specific heat led to a Debye temperature of 110 K and an average sound velocity of 2122 m s−1. The thermal conductivity of a polycrystalline ZrSe3 sample exhibited a maximum value of 10.4 ± 1.9 W m−1 K−1 at 40 K. The thermal conductivity decreased above 40 K and reached a room-temperature value of 5.4 ± 1.3 W m−1 K−1. The Debye model fitting of the solid thermal conductivity agreed well with the experimental data below 200 K but showed a deviation at high temperatures, indicating that optical phonons could substantially contribute to thermal transport at high temperatures. The calculated phonon mean free path decreased with temperatures between 2 and 21 K. The mean free path at 2 K approached 3 μm, which was similar to the grain size of the polycrystalline sample. This work provides useful insights into the preparation and thermal properties of quasi-1D ZrSe3.more » « less
