Nanoindentation coupled with Atomic Force Microscopy was used to study stiffness, hardness, and the reduced Young’s modulus of reduced graphene oxide. Oxygen reduction on the graphene oxide sample was performed via LightScribe DVD burner reduction, a cost-effective approach with potential for large scale graphene production. The reduction of oxygen in the graphene oxide sample was estimated to about 10 percent using FTIR spectroscopic analysis. Images of the various samples were captured after each reduction cycle using Atomic Force Microscopy. Elastic and spectroscopic analyses were performed on the samples after each oxygen reduction cycle in the LightScribe, thus allowing for a comparison of stiffness, hardness, and the reduced Young’s modulus based on the number of reduction cycles. The highest values obtained were after the fifth and final reduction cycle, yielding a stiffness of 22.4 N/m, a hardness of 0.55 GPa, and a reduced Young’s modulus of 1.62 GPa as compared to a stiffness of 22.8 N/m, a hardness of 0.58 GPa, and a reduced Young’s modulus of 1.84 GPa for a commercially purchased graphene film made by CVD. This data was then compared to the expected values of pristine single layer graphene. Furthermore, two RC circuits were built, one using a parallel plate capacitors made of light scribed graphene on a kapton substrate (LSGC) and a second one using a CVD deposited graphene on aluminum (CVDGC). Their RC time constants and surface charge densities were compared.
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Synthesis of Atomically Thin Hexagonal Diamond with Compression
Atomically thin diamond, also called diamane, is a two-dimensional carbon allotrope and has attracted considerable scientific interest because of its potential physical properties. However, the successful synthesis of a pristine diamane has up until now not been achieved. We demonstrate the realization of a pristine diamane through diamondization of mechanically exfoliated few-layer graphene via compression. Resistance, optical absorption, and X-ray diffraction measurements reveal that hexagonal diamane (h-diamane) with a bandgap of 2.8 ± 0.3 eV forms by compressing trilayer and thicker graphene to above 20 GPa at room temperature and can be preserved upon decompression to ∼1.0 GPa. Theoretical calculations indicate that a (−2110)-oriented h-diamane is energetically stable and has a lower enthalpy than its few-layer graphene precursor above the transition pressure. Compared to gapless graphene, semiconducting h-diamane offers exciting possibilities for carbon-based electronic devices.
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- Award ID(s):
- 1708448
- PAR ID:
- 10192171
- Date Published:
- Journal Name:
- Nano letters
- Volume:
- 20
- ISSN:
- 1530-6992
- Page Range / eLocation ID:
- 5916
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Continuum mechanics break down in bending stiffness calculations of mono- and few-layered two-dimensional (2D) van der Waals crystal sheets, because their layered atomistic structures are uniquely characterized by strong in-plane bonding coupled with weak interlayer interactions. Here, we elucidate how the bending rigidities of pristine mono- and few-layered molybdenum disulfide (MoS 2 ), graphene, and hexagonal boron nitride (hBN) are governed by their structural geometry and intra- and inter-layer bonding interactions. Atomic force microscopy experiments on the self-folded conformations of these 2D materials on flat substrates show that the bending rigidity of MoS 2 significantly exceeds those of graphene or hBN of comparable layers, despite its much lower tensile modulus. Even on a per-thickness basis, MoS 2 is found to possess similar bending stiffness to hBN and is much stiffer than graphene. Density functional theory calculations suggest that this high bending rigidity of MoS 2 is due to its large interlayer thickness and strong interlayer shear, which prevail over its weak in-plane bonding.more » « less
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1021/acs.nanolett.0c01872
