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Vanadium oxide V3O5 exhibits an insulator-to-metal transition (IMT) near 430 K, which is the highest value for all vanadium oxides exhibiting IMTs. This makes it interesting for advanced electronic applications. However, the properties of V3O5 have been little studied, and, in particular, there are no reports of experimentally determined mechanical properties. In this work, Young’s modulus of sputter-deposited V3O5 thin films has been determined by measuring the fundamental resonant frequency of V3O5-coated silicon microcantilevers using a laser beam deflection technique. After deposition, the films were characterized by x-ray diffraction, resistivity measurements, and atomic force microscopy. The value of Young’s modulus experimentally determined for V3O5 was 198 ± 14 GPa, which is slightly lower than the computationally derived values for bulk crystal V3O5.
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Mechanical Characterization of Reduced Graphene Oxide Using AFM
Nanoindentation coupled with Atomic Force Microscopy was used to study stiffness, hardness, and the reduced Young’s modulus of reduced graphene oxide. Oxygen reduction on the graphene oxide sample was performed via LightScribe DVD burner reduction, a cost-effective approach with potential for large scale graphene production. The reduction of oxygen in the graphene oxide sample was estimated to about 10 percent using FTIR spectroscopic analysis. Images of the various samples were captured after each reduction cycle using Atomic Force Microscopy. Elastic and spectroscopic analyses were performed on the samples after each oxygen reduction cycle in the LightScribe, thus allowing for a comparison of stiffness, hardness, and the reduced Young’s modulus based on the number of reduction cycles. The highest values obtained were after the fifth and final reduction cycle, yielding a stiffness of 22.4 N/m, a hardness of 0.55 GPa, and a reduced Young’s modulus of 1.62 GPa as compared to a stiffness of 22.8 N/m, a hardness of 0.58 GPa, and a reduced Young’s modulus of 1.84 GPa for a commercially purchased graphene film made by CVD. This data was then compared to the expected values of pristine single layer graphene. Furthermore, two RC circuits were built, one using a parallel plate capacitors made of light scribed graphene on a kapton substrate (LSGC) and a second one using a CVD deposited graphene on aluminum (CVDGC). Their RC time constants and surface charge densities were compared.
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- Award ID(s):
- 1655740
- PAR ID:
- 10094762
- Date Published:
- Journal Name:
- Advances in Condensed Matter Physics
- Volume:
- 2019
- ISSN:
- 1687-8108
- Page Range / eLocation ID:
- 1 to 13
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1155/2019/8713965
