Spin–orbit torque field-effect transistor (SOTFET): Proposal for a magnetoelectric memory
- Award ID(s):
- 1740286
- NSF-PAR ID:
- 10198890
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 116
- Issue:
- 24
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 242405
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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