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Title: Spin–orbit torque field-effect transistor (SOTFET): Proposal for a magnetoelectric memory
Authors:
; ; ; ; ; ; ; ; ; ;
Award ID(s):
1740286
Publication Date:
NSF-PAR ID:
10198890
Journal Name:
Applied Physics Letters
Volume:
116
Issue:
24
Page Range or eLocation-ID:
242405
ISSN:
0003-6951
Sponsoring Org:
National Science Foundation
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