skip to main content


Title: Spin–orbit torque nano-oscillator with giant magnetoresistance readout
Abstract

Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic and nonmagnetic metals are ultra-compact current-controlled microwave signal sources. They are attractive for practical applications such as microwave assisted magnetic recording, neuromorphic computing, and chip-to-chip wireless communications. However, a major drawback of these devices is low output microwave power arising from the relatively small anisotropic magnetoresistance of the ferromagnetic layer. Here we experimentally show that the output power of a spin-orbit torque nano-oscillator can be significantly enhanced without compromising its structural simplicity. Addition of a ferromagnetic reference layer to the oscillator allows us to employ current-in-plane giant magnetoresistance to boost the output power of the device. This enhancement of the output power is a result of both large magnitude of giant magnetoresistance compared to that of anisotropic magnetoresistance and their different angular dependencies. Our results hold promise for practical applications of spin-orbit torque nano-oscillators.

 
more » « less
Award ID(s):
1708885 1641989
NSF-PAR ID:
10198944
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Communications Physics
Volume:
3
Issue:
1
ISSN:
2399-3650
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 105 A cm−2have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiencyθSHin TIs is quantified by both the SOT-induced shift of the magnetic switching field (θSH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θSH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.

     
    more » « less
  2. Abstract

    Strong damping‐like spin‐orbit torque (τDL) has great potential for enabling ultrafast energy‐efficient magnetic memories, oscillators, and logic. So far, the reported τDLexerted on a thin‐film magnet must result from an externally generated spin current or from an internal non‐equilibrium spin polarization in non‐centrosymmetric GaMnAs single crystals. Here, for the first time a very strong, unexpected τDLis demonstrated from current flow within ferromagnetic single layers of chemically disordered, face‐centered‐cubic CoPt. It is established here that the novel τDLis a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This τDLmost likely arises from a net transverse spin polarization associated with a strong spin Hall effect, while there is no detectable long‐range asymmetry in the material. These results broaden the scope of spin‐orbitronics and provide a novel avenue for developing single‐layer‐based spin‐torque memory, oscillator, and logic technologies.

     
    more » « less
  3. Stochastic oscillators based on emerging nanodevices are attractive because of their ultra-low power requirement and the ability to exhibit stochastic resonance, a phenomenon where synchronization to weak input signals is enabled due to ambient noise. In this work, a low barrier nanomagnet-based stochastic oscillator is demonstrated, whose output jumps spontaneously between two states by harnessing the ambient thermal noise, requiring no additional power. By utilizing spin–orbit torque in a three-terminal device configuration, phase synchronization of these oscillators to weak periodic drives of particular frequencies is demonstrated. Experiments are performed to show the tunability of this synchronization frequency by controlling an electrical feedback parameter. The current required for synchronization is more than eight times smaller than that required for the deterministic switching of similar nanomagnetic devices. A model based on Kramers’ transition rate in a symmetric double well potential is adopted and dynamical simulations are performed to explain the experimental results.

     
    more » « less
  4. We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

     
    more » « less
  5. Abstract

    Employing the probabilistic nature of unstable nano-magnet switching has recently emerged as a path towards unconventional computational systems such as neuromorphic or Bayesian networks. In this letter, we demonstrate proof-of-concept stochastic binary operation using hard axis initialization of nano-magnets and control of their output state probability (activation function) by means of input currents. Our method provides a natural path towards addition of weighted inputs from various sources, mimicking the integration function of neurons. In our experiment, spin orbit torque (SOT) is employed to “drive” nano-magnets with perpendicular magnetic anisotropy (PMA) -to their metastable state, i.e. in-plane hard axis. Next, the probability of relaxing into one magnetization state (+mi) or the other (−mi) is controlled using an Oersted field generated by an electrically isolated current loop, which acts as a “charge” input to the device. The final state of the magnet is read out by the anomalous Hall effect (AHE), demonstrating that the magnetization can be probabilistically manipulated and output through charge currents, closing the loop from charge-to-spin and spin-to-charge conversion. Based on these building blocks, a two-node directed network is successfully demonstrated where the status of the second node is determined by the probabilistic output of the previous node and a weighted connection between them. We have also studied the effects of various magnetic properties, such as magnet size and anisotropic field on the stochastic operation of individual devices through Monte Carlo simulations of Landau Lifshitz Gilbert (LLG) equation. The three-terminal stochastic devices demonstrated here are a critical step towards building energy efficient spin based neural networks and show the potential for a new application space.

     
    more » « less