Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.
Solid-state spin defects are a promising platform for quantum science and technology. The realization of larger-scale quantum systems with solid-state defects will require high-fidelity control over multiple defects with nanoscale separations, with strong spin-spin interactions for multi-qubit logic operations and the creation of entangled states. We demonstrate an optical frequency-domain multiplexing technique, allowing high-fidelity initialization and single-shot spin measurement of six rare-earth (Er3+) ions, within the subwavelength volume of a single, silicon photonic crystal cavity. We also demonstrate subwavelength control over coherent spin rotations by using an optical AC Stark shift. Our approach may be scaled to large numbers of ions with arbitrarily small separation and is a step toward realizing strongly interacting atomic defect ensembles with applications to quantum information processing and fundamental studies of many-body dynamics.
more » « less- Award ID(s):
- 1640959
- NSF-PAR ID:
- 10199807
- Publisher / Repository:
- American Association for the Advancement of Science (AAAS)
- Date Published:
- Journal Name:
- Science
- Volume:
- 370
- Issue:
- 6516
- ISSN:
- 0036-8075
- Page Range / eLocation ID:
- p. 592-595
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
-
more » « less
Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of optical control systems that can manipulate the light field with high fidelity at wavelengths relevant for AMO applications. These systems are characterized by criteria: (C1) operation at a design wavelength of choice in the visible (VIS) or near-infrared (IR) spectrum, (C2) a scalable platform that can support large channel counts, (C3) high-intensity modulation extinction and (C4) repeatability compatible with low gate errors, and (C5) fast switching times. Here, we provide a pathway to address these challenges by introducing an atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology. Based on a complementary metal–oxide–semiconductor fabrication process, this atom-control PIC (APIC) technology can meet system requirements (C1)–(C5). As a proof of concept, we demonstrate a 16-channel silicon-nitride-based APIC with (5.8±0.4)ns response times and >30dB extinction ratio at a wavelength of 780 nm.
-
more » « less
Abstract Atomic systems, ranging from trapped ions to ultracold and Rydberg atoms, offer unprecedented control over both internal and external degrees of freedom at the single‐particle level. They are considered among the foremost candidates for realizing quantum simulation and computation platforms that can outperform classical computers at specific tasks. In this work, a realistic experimental toolbox for quantum information processing with neutral alkaline‐earth‐like atoms in optical tweezer arrays is described. In particular, a comprehensive and scalable architecture based on a programmable array of alkaline‐earth‐like atoms is proposed, exploiting their electronic clock states as a precise and robust auxiliary degree of freedom, and thus allowing for efficient all‐optical one‐ and two‐qubit operations between nuclear spin qubits. The proposed platform promises excellent performance thanks to high‐fidelity register initialization, rapid spin‐exchange gates, and error detection in read‐out. As a benchmark and application example, the expected fidelity of an increasing number of subsequent SWAP gates for optimal parameters is computed, which can be used to distribute entanglement between remote atoms within the array.
-
more » « less
Abstract Herein, the role that point defects have played over the last two decades in realizing solid‐state laser refrigeration is discussed. A brief introduction to the field of solid‐state laser refrigeration is given with an emphasis on the fundamental physical phenomena and quantized electronic transitions that have made solid‐state laser‐cooling possible. Lanthanide‐based point defects, such as trivalent ytterbium ions (Yb3+), have played a central role in the first demonstrations and subsequent development of advanced materials for solid‐state laser refrigeration. Significant discussion is devoted to the quantum mechanical description of optical transitions in lanthanide ions, and their influence on laser cooling. Transition‐metal point defects have been shown to generate substantial background absorption in ceramic materials, decreasing the overall efficiency of a particular laser refrigeration material. Other potential color centers based on fluoride vacancies with multiple potential charge states are also considered. In conclusion, novel materials for solid‐state laser refrigeration, including color centers in diamond that have recently been proposed to realize the solid‐state laser refrigeration of semiconducting materials, are discussed.
-
Topological surface currents accessed through reversible hydrogenation of the three-dimensional bulkmore » « less
Abstract Hydrogen, the smallest and most abundant element in nature, can be efficiently incorporated within a solid and drastically modify its electronic and structural state. In most semiconductors interstitial hydrogen binds to defects and is known to be amphoteric, namely it can act either as a donor (H+) or an acceptor (H−) of charge, nearly always counteracting the prevailing conductivity type. Here we demonstrate that hydrogenation resolves an outstanding challenge in chalcogenide classes of three-dimensional (3D) topological insulators and magnets — the control of intrinsic bulk conduction that denies access to quantum surface transport, imposing severe thickness limits on the bulk. With electrons donated by a reversible binding of H+ions to Te(Se) chalcogens, carrier densities are reduced by over 1020cm−3, allowing tuning the Fermi level into the bulk bandgap to enter surface/edge current channels without altering carrier mobility or the bandstructure. The hydrogen-tuned topological nanostructures are stable at room temperature and tunable disregarding bulk size, opening a breadth of device platforms for harnessing emergent topological states.
