More Like this

1. Wave-induced shallow-water monopolar vortex: large-scale experiments

   https://doi.org/10.1017/jfm.2020.980  

   Kalligeris, N. ; Kim, Y. ; Lynett, P.J. ( March 2021 , Journal of Fluid Mechanics)

   Numerous field observations of tsunami-induced eddies in ports and harbours have been reported for recent tsunami events. We examine the evolution of a turbulent shallow-water monopolar vortex generated by a long wave through a series of large-scale experiments in a rectangular wave basin. A leading-elevation asymmetric wave is guided through a narrow channel to form a flow separation region on the lee side of a straight vertical breakwater, which coupled with the transient flow leads to the formation of a monopolar turbulent coherent structure (TCS). The vortex flow after detachment from the trailing jet is fully turbulent ( $Re_h \sim O(10^{4}\text {--}10^{5}$ )) for the remainder of the experimental duration. The free surface velocity field was extracted through particle tracking velocimetry over several experimental trials. The first-order model proposed by Seol & Jirka ( J. Fluid Mech. , vol. 665, 2010, pp. 274–299) to predict the decay and spatial growth of shallow-water vortices fits the experimental data well. Bottom friction is predicted to induce a $t^{-1}$ azimuthal velocity decay and turbulent viscous diffusion results in a $\sqrt {t}$ bulk vortex radial growth, where $t$ represents time. The azimuthal velocity, vorticity and free surface elevation profiles are well described through anmore »idealised geophysical vortex. Kinematic free surface boundary conditions predict weak upwelling in the TCS-centre, followed by a zone of downwelling in a recirculation pattern along the water column. The vertical confinement of the flow is quantified through the ratio of kinetic energy contained in the secondary and primary surface velocity fields and a transition point towards a quasi-two-dimensional flow is identified.« less
2. Holographic entanglement negativity and replica symmetry breaking

   https://doi.org/10.1007/JHEP06(2021)024  

   Dong, Xi ; Qi, Xiao-Liang ; Walter, Michael ( June 2021 , Journal of High Energy Physics)

   A bstract Since the work of Ryu and Takayanagi, deep connections between quantum entanglement and spacetime geometry have been revealed. The negative eigenvalues of the partial transpose of a bipartite density operator is a useful diagnostic of entanglement. In this paper, we discuss the properties of the associated entanglement negativity and its Rényi generalizations in holographic duality. We first review the definition of the Rényi negativities, which contain the familiar logarithmic negativity as a special case. We then study these quantities in the random tensor network model and rigorously derive their large bond dimension asymptotics. Finally, we study entanglement negativity in holographic theories with a gravity dual, where we find that Rényi negativities are often dominated by bulk solutions that break the replica symmetry. From these replica symmetry breaking solutions, we derive general expressions for Rényi negativities and their special limits including the logarithmic negativity. In fixed-area states, these general expressions simplify dramatically and agree precisely with our results in the random tensor network model. This provides a concrete setting for further studying the implications of replica symmetry breaking in holography.
3. LIGO–Virgo correlations between mass ratio and effective inspiral spin: testing the active galactic nuclei channel

   https://doi.org/10.1093/mnras/stac1570  

   McKernan, B. ; Ford, K. E. S. ; Callister, T. ; Farr, W. M. ; O’Shaughnessy, R. ; Smith, R. ; Thrane, E. ; Vajpeyi, A. ( June 2022 , Monthly Notices of the Royal Astronomical Society)

   Observations by LIGO–Virgo of binary black hole mergers suggest a possible anticorrelation between black hole mass ratio (q = m2/m1) and the effective inspiral spin parameter χeff, the mass-weighted spin projection on to the binary orbital angular momentum. We show that such an anticorrelation can arise for binary black holes assembled in active galactic nuclei (AGNs) due to spherical and planar symmetry-breaking effects. We describe a phenomenological model in which (1) heavier black holes live in the AGN disc and tend to spin-up into alignment with the disc; (2) lighter black holes with random spin orientations live in the nuclear spheroid; (3) the AGN disc is dense enough to rapidly capture a fraction of the spheroid component, but small in radial extent to limit the number of bulk disc mergers; (4) migration within the disc is non-uniform, likely disrupted by feedback from migrators or disc turbulence; (5) dynamical encounters in the disc are common and preferentially disrupt binaries that are retrograde around their centre of mass, particularly at stalling orbits, or traps. Comparisons of predictions in (q, χeff) parameter space for the different channels may allow us to distinguish their fractional contributions to the observed merger rates.
4. Dressing bulk fields in AdS3

   https://doi.org/10.1007/JHEP10(2020)189  

   Kabat, Daniel ; Lifschytz, Gilad ( October 2020 , Journal of High Energy Physics)

   A bstract We study a set of CFT operators suitable for reconstructing a charged bulk scalar field ϕ in AdS 3 (dual to an operator $$ \mathcal{O} $$ O of dimension ∆ in the CFT) in the presence of a conserved spin- n current in the CFT. One has to sum a tower of smeared non-primary scalars $$ {\partial}_{+}^m{J}^{(m)} $$ ∂ + m J m , where J ( m ) are primaries with twist ∆ and spin m built from $$ \mathcal{O} $$ O and the current. The coefficients of these operators can be fixed by demanding that bulk correlators are well-defined: with a simple ansatz this requirement allows us to calculate bulk correlators directly from the CFT. They are built from specific polynomials of the kinematic invariants up to a freedom to make field redefinitions. To order 1/ N this procedure captures the dressing of the bulk scalar field by a radial generalized Wilson line.
5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less