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Nanoscale plasmonic gaps are useful structures both electrically, for creating quantum tunnel junctions, and optically, for confining light. Inelastic tunneling of electrons in a tunnel junction is an attractive source of light due to the ultrafast response rate granted by the tunneling time of electrons in the system as well as the compact dimensions. A main hurdle for these light emitting tunnel junctions, however, is their low external efficiency given by both low electron-to-plasmon conversion as well as low plasmon-to-photon conversion. Inversely, coupling light into a nanogap for high confinement and field enhancement can be difficult due to the size mismatches involved. We show a 3 nm gap metal-insulator-metal plasmonic tunnel junction evanescently coupled to the fundamental TE mode of a standard silicon waveguide in a tapered directional coupler configuration with a transmission efficiency of 54.8% atλ =1.55μm and a 3-dB coupling bandwidth of 705 nm. In the inverse configuration, we show an electric field enhancement of |E|/|E0| ≈120 within a plasmonic tunnel junction in the technologically important optical telecommunications band.
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Ultra-low-power nonvolatile integrated photonic switches and modulators based on nanogap-enhanced phase-change waveguides
We propose a nanogap-enhanced phase-change waveguide with silicon PIN heaters. Thanks to the enhanced light-matter interaction in the nanogap, the proposed structure exhibits strong attenuation (Δα = ∼35 dB/µm) and optical phase (Δneff = ∼1.2) modulation atλ = 1550 nm when achieving complete phase transitions. We further investigate two active optical devices based on the proposed waveguide, including an electro-absorption modulator and a 1 × 2 directional-coupler optical switch. Finite-difference time-domain simulation of the proposed modulator shows a high extinction ratio of ∼17 dB at 1550 nm with an active segment of volume only ∼0.004λ3. By exploiting a directional coupler design, we present a 1 × 2 optical switch with an insertion loss of < 4 dB and a compact coupling length of ∼ 15 µm while maintaining small crosstalk less than −7.2 dB over an optical bandwidth of 50 nm. Thermal analysis shows that a 10 V pulse of 30 ns (1×1 modulator) and 55 ns (1×2 switch) in duration is required to raise the GST temperature of the phase-change waveguide above the melting temperature to induce the amorphization; however, the complete crystallization occurs by applying a 5 V pulse of 180 ns (1×1 modulator) and a 6 V pulse of 200 ns (1×2 switch), respectively.
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- Award ID(s):
- 2003509
- PAR ID:
- 10202778
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Express
- Volume:
- 28
- Issue:
- 25
- ISSN:
- 1094-4087; OPEXFF
- Format(s):
- Medium: X Size: Article No. 37265
- Size(s):
- Article No. 37265
- Sponsoring Org:
- National Science Foundation
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