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Over the last century, quantum theories have revolutionized our understanding of material properties. One of the most striking quantum phenomena occurring in heterogeneous media is the quantum tunneling effect, where carriers can tunnel through potential barriers even if the barrier height exceeds the carrier energy. Interestingly, the tunneling process can be accompanied by the absorption or emission of light. In most tunneling junctions made of noble metal electrodes, these optical phenomena are governed by plasmonic modes, i.e., light-driven collective oscillations of surface electrons. In the emission process, plasmon excitation via inelastic tunneling electrons can improve the efficiency of photon generation, resulting in bright nanoscale optical sources. On the other hand, the incident light can affect the tunneling behavior of plasmonic junctions as well, leading to phenomena such as optical rectification and induced photocurrent. Thus, plasmonic tunneling junctions provide a rich platform for investigating light–matter interactions, paving the way for various applications, including nanoscale light sources, sensors, and chemical reactors. In this paper, we will introduce recent research progress and promising applications based on plasmonic tunneling junctions.
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Efficient TE-polarized mode coupling between a plasmonic tunnel junction and a photonic waveguide
Nanoscale plasmonic gaps are useful structures both electrically, for creating quantum tunnel junctions, and optically, for confining light. Inelastic tunneling of electrons in a tunnel junction is an attractive source of light due to the ultrafast response rate granted by the tunneling time of electrons in the system as well as the compact dimensions. A main hurdle for these light emitting tunnel junctions, however, is their low external efficiency given by both low electron-to-plasmon conversion as well as low plasmon-to-photon conversion. Inversely, coupling light into a nanogap for high confinement and field enhancement can be difficult due to the size mismatches involved. We show a 3 nm gap metal-insulator-metal plasmonic tunnel junction evanescently coupled to the fundamental TE mode of a standard silicon waveguide in a tapered directional coupler configuration with a transmission efficiency of 54.8% atλ =1.55μm and a 3-dB coupling bandwidth of 705 nm. In the inverse configuration, we show an electric field enhancement of |E|/|E0| ≈120 within a plasmonic tunnel junction in the technologically important optical telecommunications band.
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- PAR ID:
- 10560024
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Express
- Volume:
- 32
- Issue:
- 26
- ISSN:
- 1094-4087; OPEXFF
- Format(s):
- Medium: X Size: Article No. 47574
- Size(s):
- Article No. 47574
- Sponsoring Org:
- National Science Foundation
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