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Title: Dual-storage-port Nonvolatile SRAM based on Back-end-of-the-line Processed Hf0.5Zr0.5O2 Ferroelectric Capacitors Towards 3D Selector-free Cross-point Memory
This work presents the design and experimental demonstration of a novel dual-storage-portnonvolatile SRAM based on back-end-of-the-line processed Hf0.5Zr0.5O2-based metal-ferroelectric-metalcapacitors, which offers significant advantages over the conventional single-storage-port version withoutarea penalty, and paves the way for implementing our proposed selector-free 3D cross-point memory.
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Liu, M.
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IEEE transactions on electron devices
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National Science Foundation
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